Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 6/20 | 0.37 |
| ▸ | MMP1 | P03956 | 2/20 | 0.37 |
| ▸ | MMP2 | P08253 | 2/20 | 0.37 |
| ▸ | MMP9 | P14780 | 2/20 | 0.37 |
| ▸ | MMP8 | P22894 | 2/20 | 0.37 |
| ▸ | MMP13 | P45452 | 2/20 | 0.37 |
| ▸ | CA1 | P00915 | 5/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.35 |
| ▸ | MEN1 | O00255 | 1/20 | 0.35 |
| ▸ | CTSB | P07858 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.33 |
| ▸ | ABCC9 | O60706 | 1/20 | 0.32 |
| ▸ | ABCC8 | Q09428 | 1/20 | 0.32 |
| ▸ | KCNJ11 | Q14654 | 1/20 | 0.32 |
| ▸ | KCNJ8 | Q15842 | 1/20 | 0.32 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
| ▸ | ATM | Q13315 | 1/20 | 0.32 |
| ▸ | PKM | P14618 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3965723 | 0.99 | CA2 (0.37) | CA2MMP1MMP2MMP9MMP8 | |
| SCHEMBL3968808 | 0.87 | MMP1 (0.38) | CA2MMP1MMP2MMP9MMP8 | |
| SCHEMBL2514812 | 0.86 | CTSB (0.39) | KMT2AMEN1CTSBTDP1ABCC9 | |
| SCHEMBL3970341 | 0.85 | MMP1 (0.38) | CA2MMP1MMP2MMP9MMP8 | |
| SCHEMBL3971011 | 0.83 | CA1 (0.36) | CA2MMP1MMP2MMP9MMP8 | |
| SCHEMBL3963558 | 0.82 | CA1 (0.34) | CA2MMP1MMP2MMP9MMP8 | |
| SCHEMBL3114357 | 0.79 | CA1 (0.38) | CA2CA1KMT2AMEN1 | |
| SCHEMBL3968561 | 0.79 | IMPDH2 (0.35) | CA2CA1ABCC9ABCC8KCNJ11 | |
| SCHEMBL3107027 | 0.78 | CA1 (0.39) | CA2CA1KMT2AMEN1 | |
| SCHEMBL3970505 | 0.78 | IMPDH2 (0.35) | CA2CA1ABCC9ABCC8KCNJ11 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7531286-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-05-12 | — | — | US | disclosed |
| US-7510817-B2 | Photoresist polymer compositions | JSR CORPORATION (JP) | 2009-03-31 | — | — | US | disclosed |
| US-20070248911-A1 | Pattern forming method and bilayer film | IWASAWA HARUO | 2007-10-25 | — | — | US | disclosed |
| EP-1641848-B1 | PHOTORESIST POLYMER COMPOSITIONS | JSR CORP (JP) | 2007-08-22 | — | — | EP | disclosed |
| US-7244549-B2 | Pattern forming method and bilayer film | JSR CORPORATION (JP) | 2007-07-17 | — | — | US | disclosed |
| US-7202016-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-04-10 | — | — | US | disclosed |
| US-20060257781-A1 | Photoacid generator, and a polymer with units of 2-alkyladamantyl (meth)acrylate, 3-hydroxyadamantyl (meth)acrylate, 1-alkylcyclopentyl (meth)acrylate or 7-oxo-3,8-methano-6-oxabicyclo(3.2.1)octan-4-yl (meth)acrylate, made with a chain transfer agent; e.g. RAFT polymer; narrow polydispersity | FREESLATE, INC. | 2006-11-16 | — | — | US | disclosed |
| US-7078148-B2 | Photoresist with improved sensitivity and resolution to deep ultraviolet rays/excimer lasers; semiconductors; integrated circuits | JSR CORPORATION (JP) | 2006-07-18 | — | — | US | disclosed |
| EP-1641849-A1 | PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS | Symyx Technologies, Inc. (US) | 2006-04-05 | — | — | EP | disclosed |
| EP-1641848-A1 | PHOTORESIST POLYMER COMPOSITIONS | JSR Corporation (JP) | 2006-04-05 | — | — | EP | disclosed |
| US-20030203309-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030191268-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition | IWASAWA HARUO (JP) | 2003-10-09 | — | — | US | disclosed |
| US-20030073040-A1 | Pattern forming method and bilayer film | JSR CORPORATION (JP) | 2003-04-17 | — | — | US | disclosed |
| US-6531260-B2 | Photoresist | JSR CORPORATION (JP) | 2003-03-11 | — | — | US | disclosed |
| US-6482568-B1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-11-19 | — | — | US | disclosed |
| US-20020058201-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-05-16 | — | — | US | disclosed |
| EP-1193558-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-20010041769-A1 | Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |