Hydrochloric Acid

Hydrochloric Acid

SCHEMBL4028690

Cc1cc(O)ccc1[S+]1CCCCC1.[Cl-]

nearest known ligand 0.39

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA

The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CHRM1 known ✓ P11229 1/20 0.34
ACHE known ✓ P22303 1/20 0.33
ESR2 Q92731 10/20 0.35
ESR1 P03372 9/20 0.35
CYP3A4 P08684 2/20 0.34
MAOA P21397 2/20 0.34
ALOX15 P16050 1/20 0.34
TBXA2R P21731 1/20 0.34
ADRA1A P35348 1/20 0.34
HTR2B P41595 1/20 0.34
KDM4E B2RXH2 1/20 0.32
MEN1 O00255 1/20 0.32
ALDH1A1 P00352 1/20 0.32
LMNA P02545 1/20 0.32
MAPT P10636 1/20 0.32
HPGD P15428 1/20 0.32
HTT P42858 1/20 0.32
KMT2A Q03164 1/20 0.32
ALOX5 P09917 1/20 0.32
PTGS1 P23219 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL276611 0.98 ESR2 (0.36) ESR2ESR1CYP3A4MAOACHRM1
SCHEMBL4569603 0.96 ESR2 (0.37) ESR2ESR1CYP3A4MAOACHRM1
Hydrochloric Acid SCHEMBL10959012 0.79 TYR (0.35) MEN1ALDH1A1MAPTKMT2AALOX5
SCHEMBL795641 0.72 CYP3A4 (0.39) CYP3A4MAOACHRM1ALOX15TBXA2R
Hydrochloric Acid SCHEMBL5665257 0.72 ACHE (0.38) CYP3A4ACHEALDH1A1TSHR
Perchlorate SCHEMBL11660672 0.70 TP53 (0.33)
SCHEMBL4569605 0.70 ACHE (0.39) CYP3A4ACHEALDH1A1TSHR
SCHEMBL133003 0.65 ALDH1A1 (0.40) ESR2ESR1CYP3A4ALOX15ACHE
SCHEMBL134940 0.64 ACHE (0.44) ESR2ESR1CYP3A4ACHEKDM4E
SCHEMBL2163898 0.64 ESR2 (0.49) ESR2ESR1ACHELMNAMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 117 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025128334-A1 POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2025-06-19 WO disclosed
WO-2025128332-A1 POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2025-06-19 WO disclosed
US-20250188311-A1 POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME FUJIFILM ELECTRONIC MAT USA INC (US) 2025-06-12 US disclosed
US-20250189892-A1 POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME FUJIFILM ELECTRONIC MAT USA INC (US) 2025-06-12 US disclosed
EP-3398202-B1 PHOTOSENSITIVE STACKED STRUCTURE FUJIFILM ELECTRONIC MAT USA INC (US) 2023-08-09 EP disclosed
CN-108701582-B Photosensitive stacked structure 富士胶片电子材料美国有限公司 2023-05-02 CN disclosed
US-11175582-B2 Photosensitive stacked structure FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2021-11-16 US disclosed
US-20190018321-A1 PHOTOSENSITIVE STACKED STRUCTURE FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2019-01-17 US disclosed
EP-3398202-A1 PHOTOSENSITIVE STACKED STRUCTURE FujiFilm Electronic Materials USA, Inc. (US) 2018-11-07 EP disclosed
US-9519216-B2 Positive photosensitive resin compositions FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2016-12-13 US disclosed
US-5369200-A Positive photoresist having improved processing properties CIBA-GEIGY AG (CH) 1994-11-29 US disclosed
EP-0624827-A1 Method of making micropatterns CIBA-GEIGY AG (CH) 1994-11-17 EP disclosed
EP-0601974-A1 Positive photoresist with better properties OCG Microelectronic Materials Inc. (US) 1994-06-15 EP disclosed
US-5274060-A Copolymers crosslinkable by acid catalysis CIBA-GEIGY CORPORATION (US) 1993-12-28 US disclosed
US-5238781-A PHOTOSENSITIVE COMPOSITIONS BASED ON POLYPHENOLS AND ACETALS CIBA-GEIGY CORPORATION (US) 1993-08-24 US disclosed
EP-0502819-A1 Acid hardenable copolymers CIBA-GEIGY AG (CH) 1992-09-09 EP disclosed
EP-0501919-A1 Radiation-sensitive compositions based on polyphenols and acetals CIBA-GEIGY AG (CH) 1992-09-02 EP disclosed
EP-0085024-B1 METHOD FOR PRODUCING IMAGES IN PHOTORESIST LAYERS CIBA-GEIGY AG (CH) 1987-07-15 EP disclosed
US-4439517-A Process for the formation of images with epoxide resin CIBA-GEIGY CORPORATION (US) 1984-03-27 US disclosed
EP-0085024-A2 Method for producing images in photoresist layers CIBA-GEIGY AG (CH) 1983-08-03 EP disclosed