SCHEMBL4569603

SCHEMBL4569603

Cc1cc(O)ccc1[S+]1CCCC1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR2 Q92731 10/20 0.37
ESR1 P03372 9/20 0.37
CYP3A4 P08684 2/20 0.37
CHRM1 P11229 1/20 0.37
ALOX15 P16050 1/20 0.37
MAOA P21397 1/20 0.37
TBXA2R P21731 1/20 0.37
ADRA1A P35348 1/20 0.37
HTR2B P41595 1/20 0.37
ACHE P22303 3/20 0.35
KDM4E B2RXH2 1/20 0.33
MEN1 O00255 1/20 0.33
ALDH1A1 P00352 1/20 0.33
LMNA P02545 1/20 0.33
MAPT P10636 1/20 0.33
HPGD P15428 1/20 0.33
HTT P42858 1/20 0.33
KMT2A Q03164 1/20 0.33
HSD17B1 P14061 1/20 0.33
TSHR P16473 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL276611 0.98 ESR2 (0.36) ESR2ESR1CYP3A4CHRM1ALOX15
Hydrochloric Acid SCHEMBL4028690 0.96 ESR2 (0.35) ESR2ESR1CYP3A4CHRM1ALOX15
Hydrochloric Acid SCHEMBL10959012 0.78 TYR (0.35) MEN1ALDH1A1MAPTKMT2ATSHR
Perchlorate SCHEMBL11660672 0.73 TP53 (0.33)
SCHEMBL795641 0.71 CYP3A4 (0.39) CYP3A4CHRM1ALOX15MAOATBXA2R
SCHEMBL4569605 0.68 ACHE (0.39) CYP3A4ACHEALDH1A1TSHR
Hydrochloric Acid SCHEMBL5665257 0.67 ACHE (0.38) CYP3A4ACHEALDH1A1TSHR
SCHEMBL125704 0.65
SCHEMBL29405862 0.65
SCHEMBL107172 0.64 ALDH1A1 (0.42) ESR2ESR1CYP3A4ALOX15ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9260407-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-16 US disclosed
US-8921029-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-30 US disclosed
US-8663900-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-03-04 US disclosed
US-20130022920-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-01-24 US disclosed
US-20130022917-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-01-24 US disclosed
US-20120122032-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-17 US disclosed
US-8017300-B2 Compound, positive resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-09-13 US disclosed
US-20110122177-A1 Ink Jet Recording Apparatus KABUSHIKI KAISHA TOSHIBA (JP) 2011-05-26 US disclosed
US-7871755-B2 Photosensitive composition KABUSHIKI KAISHA TOSHIBA (JP) 2011-01-18 US disclosed
US-7858670-B2 Photosensitive inkjet ink TOSHIBA TEC KABUSHIKI KAISHA (JP) 2010-12-28 US disclosed
US-7803851-B2 Inkjet ink TOSHIBA TEC KABUSHIKI KAISHA (JP) 2010-09-28 US disclosed
US-7579390-B2 Inkjet ink composition and printed matters created using inkjet ink composition TOSHIBA TEC KABUSHIKI KAISHA (JP) 2009-08-25 US disclosed
US-20090202939-A1 COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-08-13 US disclosed
US-20090081582-A1 irradiating a predetermined region of photosensitive layer, subjecting the photosensitive layer after baking to development treatment with an alkali aqueous solution to selectively remove the light-exposed part; has a photo-acid generator which generates an acid by the action of actinic radiation KABUSHIKI KAISHA TOSHIBA 2009-03-26 US disclosed
US-7445881-B2 Method of manufacturing semiconductor device, acid etching resistant material and copolymer KABUSHIKI KAISHA TOSHIBA (JP) 2008-11-04 US disclosed
US-7375145-B2 capable of overcoming the problems such as poor cation polymerizing reaction and solvent resistance which are particularly accompanied with the conventional photosensitive inkjet ink containing, as a main component, a vinyl ether compound TOSHIBA TEC KABUSHIKI KAISHA (JP) 2008-05-20 US disclosed
US-20070185224-A1 PHOTOSENSITIVE INKJET INK KABUSHIKI KAISHA TOSHIBA (JP) 2007-08-09 US disclosed
US-20070138139-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ACID ETCHING RESISTANCE MATERIAL AND COPOLYMER ASAKAWA KOJI 2007-06-21 US disclosed
US-7163781-B2 Process for producing a semiconductor device KABUSHIKI KAISHA TOSHIBA (JP) 2007-01-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090202939-A1 COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN ACIN1, RER1, RRS1 ESR2 1750/4885ESR1 1138/4885CYP3A4 2900/4885
US-20120122032-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME RER1, RCOR1, PNISR ESR2 2642/4885ESR1 1047/4885CYP3A4 4287/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.