Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP3A4 | P08684 | 2/20 | 0.39 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.39 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.39 |
| ▸ | MAOA | P21397 | 1/20 | 0.39 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.39 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.39 |
| ▸ | HTR2B | P41595 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | ACHE | P22303 | 2/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.32 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.32 |
| ▸ | ATM | Q13315 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL276611 | 0.74 | ESR2 (0.36) | CYP3A4CHRM1ALOX15MAOATBXA2R | |
| Hydrochloric Acid SCHEMBL4028690 | 0.72 | ESR2 (0.35) | CYP3A4CHRM1ALOX15MAOATBXA2R | |
| SCHEMBL4569603 | 0.71 | ESR2 (0.37) | CYP3A4CHRM1ALOX15MAOATBXA2R | |
| SCHEMBL27353180 | 0.71 | CA1 (0.55) | CYP3A4CHRM1ALOX15MAOATBXA2R | |
| SCHEMBL134940 | 0.70 | ACHE (0.44) | CYP3A4ALDH1A1ACHEMEN1KMT2A | |
| SCHEMBL136578 | 0.67 | CA1 (0.44) | CYP3A4ALDH1A1ACHEMEN1KMT2A | |
| Phloroglucinol SCHEMBL483877 | 0.63 | BACE1 (0.73) | CYP3A4ALOX15MAOAALDH1A1ACHE | |
| SCHEMBL2226534 | 0.63 | TP53 (0.45) | CYP3A4ALOX15ALDH1A1 | |
| SCHEMBL476694 | 0.61 | CYP3A4 (0.58) | CYP3A4CHRM1ALOX15MAOATBXA2R | |
| SCHEMBL253926 | 0.61 | CYP3A4 (0.58) | CYP3A4CHRM1ALOX15MAOATBXA2R |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 216 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-9709892-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9709892-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-20170176858-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170176858-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20100221659-A1 | COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-09-02 | — | — | US | disclosed |
| US-20100183980-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20100063232-A1 | POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN | JSR CORPORATION (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100040977-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100028804-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20100009288-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2010-01-14 | — | — | US | disclosed |
| US-20090325102-A1 | PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2009-12-31 | — | — | US | disclosed |
| US-20090325103-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2009-12-31 | — | — | US | disclosed |
| US-20090069521-A1 | Novel Compound, Polymer, and Radiation-Sensitive Composition | JSR CORPORATION (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20070054214-A1 | Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions | JSR CORPORATION (JP) | 2007-03-08 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100063232-A1 | POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN | ASIC1, RER1, RPS10 | CYP3A4 3601/4885CHRM1 2208/4885ALOX15 1850/4885 |
| US-20090069521-A1 | Novel Compound, Polymer, and Radiation-Sensitive Composition | MRE11, RAD51, MRPS22 | CYP3A4 4493/4885CHRM1 2731/4885ALOX15 3337/4885 |
| US-20100221659-A1 | COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION | AFF1, RER1, AFF4 | CYP3A4 3605/4885CHRM1 3009/4885ALOX15 3395/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.