Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL3860046 | 1.00 | — | — | |
| Water SCHEMBL1047937 | 1.00 | — | — | |
| Water SCHEMBL29060033 | 1.00 | — | — | |
| Water SCHEMBL4449059 | 1.00 | — | — | |
| Water SCHEMBL1679398 | 1.00 | — | — | |
| Water SCHEMBL10179846 | 1.00 | — | — | |
| Water SCHEMBL28146855 | 1.00 | — | — | |
| Water SCHEMBL7877601 | 0.82 | — | — | |
| Water SCHEMBL4038943 | 0.82 | — | — | |
| Bromide SCHEMBL11674153 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7498179-B2 | Semiconductor device having ferroelectric material capacitor and method of making the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-03-03 | — | — | US | disclosed |
| US-20060003473-A1 | Semiconductor device having ferroelectric material capacitor and method of making the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-01-05 | — | — | US | disclosed |
| US-6956279-B2 | Semiconductor device having multi-layer oxygen barrier pattern | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-10-18 | — | — | US | disclosed |
| US-6686236-B2 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | TEXAS INSTRUMENTS INCORPORATED | 2004-02-03 | — | — | US | disclosed |
| US-6635497-B2 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | TEXAS INSTRUMENTS INCORPORATED | 2003-10-21 | — | — | US | disclosed |
| US-6596547-B2 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | TEXAS INSTRUMENTS INCORPORATED | 2003-07-22 | — | — | US | disclosed |
| US-20030119271-A1 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED (SG) | 2003-06-26 | — | — | US | disclosed |
| US-20030119251-A1 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED (SG) | 2003-06-26 | — | — | US | disclosed |
| US-20030119273-A1 | METHODS OF PREVENTING REDUCTION OF IROX DURING PZT FORMATION BY METALORGANIC CHEMICAL VAPOR DEPOSITION OR OTHER PROCESSING | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED (SG) | 2003-06-26 | — | — | US | disclosed |
| US-6528328-B1 | Methods of preventing reduction of irox during PZT formation by metalorganic chemical vapor deposition or other processing | TEXAS INSTRUMENTS INCORPORATED | 2003-03-04 | — | — | US | disclosed |
| US-6500678-B1 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | TEXAS INSTRUMENTS INCORPORATED | 2002-12-31 | — | — | US | disclosed |
| US-20020036307-A1 | Semiconductor device having ferroelectric material capacitor and method of making the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-03-28 | — | — | US | disclosed |