SCHEMBL4112445

SCHEMBL4112445

O=S(=O)(O)C(F)(F)COC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.33

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
SCN9A Q15858 2/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2C9 P11712 1/20 0.33
CYP2C19 P33261 1/20 0.33
NPSR1 Q6W5P4 2/20 0.32
MMP2 P08253 1/20 0.32
MMP9 P14780 1/20 0.32
EPHX2 P34913 1/20 0.32
MEN1 O00255 1/20 0.31
ALDH1A1 P00352 1/20 0.31
HTT P42858 1/20 0.31
KMT2A Q03164 1/20 0.31
TSHR P16473 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
GAA P10253 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Carbon Monoxide SCHEMBL1262660 0.89 MMP2 (0.32) SCN9ACYP1A2CYP3A4CYP2C9CYP2C19
SCHEMBL26064079 0.87 TSHR (0.44) NPSR1EPHX2TSHR
SCHEMBL13447604 0.84 CYP1A2 (0.33) SCN9ACYP1A2CYP3A4CYP2C9CYP2C19
SCHEMBL12912769 0.84 SCN9A (0.32) SCN9AMMP2MMP9EPHX2
SCHEMBL15999320 0.83 ALDH1A1 (0.35) SCN9ACYP1A2CYP3A4CYP2C9CYP2C19
SCHEMBL18785912 0.80 CYP19A1 (0.34) NPSR1EPHX2TSHR
SCHEMBL14818361 0.77 GBA2 (0.37) SCN9AEPHX2MEN1ALDH1A1KMT2A
SCHEMBL14770385 0.76 SCN9A (0.32) SCN9A
SCHEMBL2610451 0.76 ALDH1A1 (0.44) CYP1A2CYP3A4CYP2C9CYP2C19NPSR1
SCHEMBL15947710 0.76 SCN9A (0.34) SCN9ANPSR1MMP2MMP9EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-20230127914-A1 RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-27 US disclosed
US-9880472-B2 Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same FUJIFILM CORPORATION (JP) 2018-01-30 US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-20160342083-A1 PATTERN FORMATION METHOD, ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-11-24 US disclosed
US-20160342083-A1 PATTERN FORMATION METHOD, ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-11-24 US disclosed
US-20160147157-A1 PATTERN FORMATION METHOD, PATTERN, AND ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2016-05-26 US disclosed
US-20160147157-A1 PATTERN FORMATION METHOD, PATTERN, AND ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2016-05-26 US disclosed
US-9097969-B2 Compound, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-08-04 US disclosed
US-9012129-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JO) 2015-04-21 US disclosed
US-20140120472-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2014-05-01 US disclosed
US-20140017617-A1 METHOD OF PRODUCING AMMONIUM SALT COMPOUND, METHOD OF PRODUCING COMPOUND, AND COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2014-01-16 US disclosed
US-20130089819-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-11 US disclosed
US-8415085-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-09 US disclosed
US-8367299-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-02-05 US disclosed
US-20120264061-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-10-18 US disclosed
US-20120107744-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-05-03 US disclosed
US-20120015297-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO.CO., LTD. (JP) 2012-01-19 US disclosed
US-20120009521-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120107744-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND ACID GENERATOR SLC11A2, ABCC1, ASIC1 SCN9A 673/4885CYP1A2 325/4885CYP3A4 1972/4885
US-20120264061-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR C1R, RER1, ASIC1 SCN9A 1064/4885CYP1A2 2467/4885CYP3A4 3542/4885
US-20120009521-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, RFC2, RFC1 SCN9A 105/4885CYP1A2 590/4885CYP3A4 2193/4885
US-20120015297-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR ASIC1, SLC11A2, RER1 SCN9A 398/4885CYP1A2 312/4885CYP3A4 2067/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.