Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 9/20 | 0.44 |
| ▸ | MAPT | P10636 | 4/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.44 |
| ▸ | NPSR1 | Q6W5P4 | 3/20 | 0.44 |
| ▸ | MEN1 | O00255 | 2/20 | 0.44 |
| ▸ | PRKCA | P17252 | 1/20 | 0.43 |
| ▸ | PKM | P14618 | 1/20 | 0.42 |
| ▸ | CYP17A1 | P05093 | 2/20 | 0.41 |
| ▸ | CYP19A1 | P11511 | 2/20 | 0.41 |
| ▸ | ATM | Q13315 | 1/20 | 0.38 |
| ▸ | GAA | P10253 | 2/20 | 0.38 |
| ▸ | XBP1 | P17861 | 1/20 | 0.36 |
| ▸ | RECQL | P46063 | 1/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.35 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.35 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.35 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1398391 | 0.98 | ALDH1A1 (0.43) | ALDH1A1MAPTKMT2ANPSR1MEN1 | |
| SCHEMBL21653911 | 0.93 | ALDH1A1 (0.41) | ALDH1A1MAPTKMT2ANPSR1MEN1 | |
| SCHEMBL1262662 | 0.91 | ALDH1A1 (0.38) | ALDH1A1MAPTKMT2ANPSR1MEN1 | |
| Tetrahydrothiophene SCHEMBL29928428 | 0.91 | PKM (0.39) | ALDH1A1MAPTKMT2ANPSR1MEN1 | |
| SCHEMBL18922636 | 0.90 | PRKCA (0.39) | ALDH1A1MAPTKMT2ANPSR1MEN1 | |
| SCHEMBL12912763 | 0.90 | ALDH1A1 (0.46) | ALDH1A1MAPTKMT2ANPSR1MEN1 | |
| SCHEMBL15853229 | 0.89 | ALDH1A1 (0.37) | ALDH1A1MAPTKMT2ANPSR1MEN1 | |
| SCHEMBL22759051 | 0.89 | ALDH1A1 (0.37) | ALDH1A1MAPTKMT2ANPSR1MEN1 | |
| SCHEMBL16622170 | 0.89 | ALDH1A1 (0.36) | ALDH1A1MAPTKMT2ANPSR1MEN1 | |
| SCHEMBL785727 | 0.89 | ALDH1A1 (0.36) | ALDH1A1MAPTKMT2ANPSR1MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1169 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026100367-A1 | RESIST MATERIAL AND PATTERN FORMATION METHOD | 東京応化工業株式会社 | 2026-05-15 | — | — | WO | disclosed |
| EP-4722811-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2026-04-08 | — | — | EP | disclosed |
| WO-2024242175-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD | 東京応化工業株式会社 | 2024-11-28 | — | — | WO | disclosed |
| WO-2024150677-A1 | ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION | 富士フイルム株式会社 | 2024-07-18 | — | — | WO | disclosed |
| US-20240231230-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20240231230-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-07-04 | — | — | US | disclosed |
| US-20240201588-A1 | ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-06-20 | — | — | US | disclosed |
| US-20100015552-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-01-21 | — | — | US | disclosed |
| US-20100015553-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2010-01-21 | — | — | US | disclosed |
| US-20100015553-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2010-01-21 | — | — | US | disclosed |
| US-20100015555-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-01-21 | — | — | US | disclosed |
| US-20090234155-A1 | Acid generating agent for chemically amplified resist compositions | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2009-09-17 | — | — | US | disclosed |
| US-20090226842-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-09-10 | — | — | US | disclosed |
| US-20090186297-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186298-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186296-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| EP-2081085-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240201588-A1 | ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE SAME | OR10J3, RER1, S100A11 | ALDH1A1 1564/4885MAPT 1242/4885KMT2A 1532/4885 |
| US-20100015555-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR | RER1, SLC11A2, FRG1 | ALDH1A1 1139/4885MAPT 4601/4885KMT2A 3538/4885 |
| US-20090234155-A1 | Acid generating agent for chemically amplified resist compositions | POLM, CBR1, PFAS | ALDH1A1 346/4885MAPT 4857/4885KMT2A 1547/4885 |
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | H1-0, HCN3, RER1 | ALDH1A1 1499/4885MAPT 4576/4885KMT2A 1382/4885 |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, COL1A1, RAD51 | ALDH1A1 762/4885MAPT 736/4885KMT2A 2701/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.