SCHEMBL4120441

SCHEMBL4120441

FC(F)(F)CNCC1CCCCC1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ADH1B P00325 1/20 0.45
ADH1C P00326 1/20 0.45
ADH1A P07327 1/20 0.45
ADH4 P08319 1/20 0.45
ADH7 P40394 1/20 0.45
EPHX1 P07099 3/20 0.41
HDAC6 Q9UBN7 6/20 0.40
MLYCD O95822 1/20 0.40
CA12 O43570 1/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
MMP1 P03956 1/20 0.38
MMP2 P08253 1/20 0.38
MMP3 P08254 1/20 0.38
MMP9 P14780 1/20 0.38
MMP8 P22894 1/20 0.38
CA9 Q16790 1/20 0.38
HDAC4 P56524 3/20 0.37
HDAC3 O15379 2/20 0.37
HDAC1 Q13547 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28751639 0.93 ADH1B (0.41) ADH1BADH1CADH1AADH4ADH7
Hydrochloric Acid SCHEMBL5394673 0.91 ADH1B (0.40) ADH1BADH1CADH1AADH4ADH7
SCHEMBL4117086 0.88 JAK2 (0.38) CYP2D6KMT2A
Hydrochloric Acid SCHEMBL5390694 0.86 JAK2 (0.37) CYP2D6KMT2A
SCHEMBL15114154 0.83 ADH1B (0.42) ADH1BADH1CADH1AADH4ADH7
SCHEMBL10193874 0.80 SIGMAR1 (0.39) ADH1BADH1CADH1AADH4ADH7
SCHEMBL15114126 0.79 ADH1B (0.39) ADH1BADH1CADH1AADH4ADH7
SCHEMBL16480078 0.78 SAT1 (0.35)
SCHEMBL30837752 0.78 CNR2 (0.33) CYP2D6
SCHEMBL28722473 0.78 JAK2 (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-20230127914-A1 RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-27 US disclosed
US-9097969-B2 Compound, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-08-04 US disclosed
US-9075304-B2 Method of producing ammonium salt compound, method of producing compound, and compound, polymeric compound, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-07-07 US disclosed
US-9023581-B2 Resist composition, method of forming resist pattern, polymeric compound, and compound TOKYO OHKA KOGYO CO., LTD (JP) 2015-05-05 US disclosed
US-9017919-B2 Resist composition, method of forming resist pattern, novel compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2015-04-28 US disclosed
US-20140017617-A1 METHOD OF PRODUCING AMMONIUM SALT COMPOUND, METHOD OF PRODUCING COMPOUND, AND COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2014-01-16 US disclosed
US-20130089819-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-11 US disclosed
US-8367299-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-02-05 US disclosed
US-20120107744-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-05-03 US disclosed
US-20120015297-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO.CO., LTD. (JP) 2012-01-19 US disclosed
US-20120009521-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120107744-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND ACID GENERATOR SLC11A2, ABCC1, ASIC1 ADH1B 265/4885ADH1C 209/4885ADH1A 193/4885
US-20120009521-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, RFC2, RFC1 ADH1B 844/4885ADH1C 867/4885ADH1A 1061/4885
US-20120015297-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR ASIC1, SLC11A2, RER1 ADH1B 626/4885ADH1C 198/4885ADH1A 278/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.