SCHEMBL4135724

SCHEMBL4135724

C=C(c1cccc(C(=C)[Si](OC)(OC)OC)c1)[Si](OC)(OC)OC

nearest known ligand 0.38

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35
NPC1 O15118 2/20 0.33
RAB9A P51151 2/20 0.33
PARP1 P09874 1/20 0.33
PRSS1 P07477 1/20 0.33
PRSS2 P07478 1/20 0.33
PRSS3 P35030 1/20 0.33
MEN1 O00255 1/20 0.33
LMNA P02545 1/20 0.33
KMT2A Q03164 1/20 0.33
RXFP1 Q9HBX9 1/20 0.33
TDP1 Q9NUW8 2/20 0.32
ATM Q13315 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
FURIN P09958 1/20 0.31
TSHR P16473 2/20 0.31
NPSR1 Q6W5P4 1/20 0.31
LOXL2 Q9Y4K0 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1408930 0.84 TSHR (0.41) CES2CES1NPC1RAB9AMEN1
SCHEMBL3955257 0.81 MAPT (0.34) CES2CES1TDP1
SCHEMBL3951762 0.81 CES2 (0.34) CES2CES1NPC1RAB9APARP1
SCHEMBL3952678 0.78 ALDH1A1 (0.35) NPC1RAB9ALMNA
SCHEMBL28803256 0.76 PTPRC (0.32)
SCHEMBL3948528 0.73 TSHR (0.34) LMNARXFP1ATMTSHR
SCHEMBL3948654 0.71 TDP1 (0.33) TDP1ATML3MBTL1FURIN
SCHEMBL3949050 0.70 ATM (0.36) PARP1TDP1ATML3MBTL1FURIN
SCHEMBL20494918 0.66 TDP1 (0.40) CES2CES1RAB9APARP1MEN1
SCHEMBL167439 0.66 FURIN (0.43) LMNATDP1ATML3MBTL1FURIN

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed