SCHEMBL426393

SCHEMBL426393

CCCc1ccc([I+]c2ccc(C(C)C)cc2)cc1

nearest known ligand 0.46

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 2/20 0.41
ACACB O00763 2/20 0.39
FKBP1A P62942 1/20 0.39
UCHL3 P15374 2/20 0.38
LPL P06858 1/20 0.38
LIPG Q9Y5X9 1/20 0.38
MAOB P27338 1/20 0.37
ALDH1A1 P00352 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
KMT2A Q03164 1/20 0.36
ACACA Q13085 1/20 0.36
CA2 P00918 1/20 0.36
PYCR1 P32322 1/20 0.35
SIGMAR1 Q99720 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL597719 0.88 IDO1 (0.50) IDO1ACACBFKBP1AUCHL3LPL
SCHEMBL5275137 0.82 ACACB (0.49) IDO1ACACBUCHL3LPLLIPG
SCHEMBL4190526 0.81 TYR (0.44) IDO1ALDH1A1L3MBTL1SIGMAR1
Bromide SCHEMBL10807840 0.79 TYR (0.42) IDO1ALDH1A1L3MBTL1SIGMAR1
Hydrochloric Acid SCHEMBL967243 0.79 TYR (0.42) IDO1ALDH1A1L3MBTL1SIGMAR1
SCHEMBL569723 0.78 CYP1A2 (0.46) IDO1LPLLIPGCA2
SCHEMBL27708207 0.78 RAB9A (0.51) MAOBALDH1A1L3MBTL1KMT2ASIGMAR1
SCHEMBL7194014 0.77 RAB9A (0.47) IDO1ACACBUCHL3ALDH1A1L3MBTL1
SCHEMBL6551663 0.77 ACACB (0.42) IDO1ACACBFKBP1AUCHL3LPL
SCHEMBL6142519 0.77 ACACB (0.49) IDO1ACACBUCHL3LPLLIPG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9760004-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2017-09-12 US disclosed
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND JSR CORPORATION (JP) 2017-02-09 US disclosed
US-9188858-B2 Radiation-sensitive resin composition, method for forming resist pattern, acid generating agent and compound JSR CORPORATION (JP) 2015-11-17 US disclosed
US-9152044-B2 2015-10-06 US disclosed
US-9122154-B2 Radiation-sensitive resin composition, and radiation-sensitive acid generating agent JSR CORPORATION (JP) 2015-09-01 US disclosed
US-9104102-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2015-08-11 US disclosed
US-20150093703-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-04-02 US disclosed
US-8921027-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2014-12-30 US disclosed
US-8889336-B2 Radiation-sensitive resin composition and radiation-sensitive acid generating agent JSR CORPORATION (JP) 2014-11-18 US disclosed
US-8889888-B2 Sulfonic acid salt and derivative thereof, photo-acid generator, and process for production of sulfonic acid salt CENTRAL GLASS COMPANY, LIMITED (JP) 2014-11-18 US disclosed
US-20130177848-A1 Polymer, Resist Material Containing Same, and Method for Forming Pattern Using Same CENTRAL GLASS COMPANY LIMITED (JP) 2013-07-11 US disclosed
US-20130078579-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATING AGENT AND COMPOUND JSR CORPORATION (JP) 2013-03-28 US disclosed
US-20120295198-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-11-22 US disclosed
US-20120082936-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120070783-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2012-03-22 US disclosed
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2012-03-15 US disclosed
US-20110143279-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2011-06-16 US disclosed
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt CENTRAL GLASS COMPANY, LIMITED (JP) 2011-05-12 US disclosed
US-7897821-B2 Sulfonium compound JSR CORPORATION (JP) 2011-03-01 US disclosed
US-20110014569-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-01-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130078579-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATING AGENT AND COMPOUND RER1, RAD51, RFT1 IDO1 4520/4885ACACB 3590/4885FKBP1A 4756/4885
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt ASIC1, FGFR1, PFAS IDO1 2989/4885ACACB 3644/4885FKBP1A 1834/4885
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND RER1, ASIC1, GAR1 IDO1 4282/4885ACACB 4219/4885FKBP1A 4699/4885
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND RAD51, RER1, XRCC5 IDO1 4385/4885ACACB 4674/4885FKBP1A 3084/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.