Known targets — ChEMBL curated mechanism
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
The experimentally established mechanism targets of Sulfuric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAOB known ✓ | P27338 | 1/20 | 0.35 |
| ▸ | NPC1 | O15118 | 3/20 | 0.41 |
| ▸ | RAB9A | P51151 | 3/20 | 0.41 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.41 |
| ▸ | CASP3 | P42574 | 1/20 | 0.41 |
| ▸ | ATM | Q13315 | 1/20 | 0.41 |
| ▸ | SENP8 | Q96LD8 | 1/20 | 0.41 |
| ▸ | SENP7 | Q9BQF6 | 1/20 | 0.41 |
| ▸ | SENP6 | Q9GZR1 | 1/20 | 0.41 |
| ▸ | CNR2 | P34972 | 3/20 | 0.40 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
| ▸ | SHBG | P04278 | 1/20 | 0.37 |
| ▸ | POLB | P06746 | 1/20 | 0.37 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.37 |
| ▸ | DRD2 | P14416 | 1/20 | 0.36 |
| ▸ | DRD3 | P35462 | 1/20 | 0.36 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.36 |
| ▸ | HRH3 | Q9Y5N1 | 5/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Sulfuric Acid SCHEMBL2920580 | 0.93 | NPC1 (0.39) | NPC1RAB9AMAPK1SMN1; SMN2LMNA | |
| Sulfuric Acid SCHEMBL2920577 | 0.89 | NPC1 (0.41) | NPC1RAB9AMAPK1SMN1; SMN2LMNA | |
| Iodide SCHEMBL5175328 | 0.88 | NPC1 (0.47) | NPC1RAB9AMAPK1SMN1; SMN2LMNA | |
| SCHEMBL244418 | 0.88 | NPC1 (0.47) | NPC1RAB9AMAPK1SMN1; SMN2LMNA | |
| Acetic Acid SCHEMBL2914240 | 0.84 | NPC1 (0.39) | NPC1RAB9AMAPK1SMN1; SMN2LMNA | |
| SCHEMBL10123416 | 0.82 | NPC1 (0.43) | NPC1RAB9AMAPK1SMN1; SMN2LMNA | |
| Sulfuric Acid SCHEMBL2773087 | 0.81 | NPC1 (0.43) | NPC1RAB9AMAPK1SMN1; SMN2LMNA | |
| Sulfuric Acid SCHEMBL2773086 | 0.81 | NPC1 (0.43) | NPC1RAB9AMAPK1SMN1; SMN2LMNA | |
| SCHEMBL30370226 | 0.81 | NPC1 (0.42) | NPC1RAB9AMAPK1SMN1; SMN2LMNA | |
| SCHEMBL4624075 | 0.80 | NPC1 (0.44) | NPC1RAB9AMAPTPOLBCYP2C9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2477073-A1 | Resist composition for electron beam, EUV or X-ray | Fujifilm Corporation (JP) | 2012-07-18 | — | — | EP | disclosed |
| US-7521168-B2 | Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. | FUJIFILM CORPORATION (JP) | 2009-04-21 | — | — | US | disclosed |
| US-20080096130-A1 | POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION | 2008-04-24 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-6887647-B2 | Negative-working resist composition for electron beams or x-rays | FUJI PHOTO FILM CO., LTD. (JP) | 2005-05-03 | — | — | US | disclosed |
| US-6824948-B1 | NEGATIVE-WORKING RESIST COMPOSITION WHICH CAN BE SUITABLY USED FOR FINE WORKING OF SEMICONDUCTOR DEVICES USING A HIGH ENERGY SUCH AS ELECTRON BEAMS, ETC. | FUJI PHOTO FILM CO., LTD. (JP) | 2004-11-30 | — | — | US | disclosed |
| US-20040197702-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2004-10-07 | — | — | US | disclosed |
| US-20030198894-A1 | Resist composition for electron beam, EUV or X-ray | FUJI PHOTO FILM CO., LTD. | 2003-10-23 | — | — | US | disclosed |
| EP-1338921-A2 | Resist composition for electron beam, X-ray or EUV | Fuji Photo Film Co., Ltd. (JP) | 2003-08-27 | — | — | EP | disclosed |
| US-20030054287-A1 | Resist composition | FUJI PHOTO FILM CO., LTD. | 2003-03-20 | — | — | US | disclosed |
| US-6528229-B2 | Mixture of polymer and acid generators | FUJI PHOTO FILM CO., LTD. (JP) | 2003-03-04 | — | — | US | disclosed |
| US-20020192592-A1 | Negative-working resist composition for electron beams or X-rays | FUJI PHOTO FILM CO., LTD. | 2002-12-19 | — | — | US | disclosed |
| US-20020058206-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2002-05-16 | — | — | US | disclosed |
| EP-1193556-A1 | Positive resist composition | Fuji Photo Film Co., Ltd. (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-20010041303-A1 | Positive photoresist composition | FUJIFILM CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |