SCHEMBL4389080

SCHEMBL4389080

FC(F)F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.32
TSHR P16473 3/20 0.30
DPP4 P27487 2/20 0.30
F2 P00734 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10801908 0.87 ALDH1A1 (0.40) ALDH1A1TSHR
SCHEMBL47554 0.87 ALDH1A1 (0.40) ALDH1A1TSHR
SCHEMBL8076653 0.85
SCHEMBL5403764 0.85 ACHE (0.43) TSHR
SCHEMBL645902 0.85 ALDH1A1 (0.31) ALDH1A1
SCHEMBL12762137 0.83 ALDH1A1 (0.38) ALDH1A1TSHR
Methane SCHEMBL2440754 0.83 ALDH1A1 (0.38) ALDH1A1TSHR
Methane SCHEMBL3253432 0.83 ALDH1A1 (0.38) ALDH1A1TSHR
Bromide SCHEMBL60557 0.83 ALDH1A1 (0.38) ALDH1A1TSHR
SCHEMBL2058664 0.83 ALDH1A1 (0.38) ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0745633-B1 Si containing high molecular compound and photosensitive resin composition NEC CORP (JP) 2000-08-02 EP claimed
WO-2024029445-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION, AND RESIST PATTERN FORMATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING SAID COMPOSITION 日産化学株式会社 2024-02-08 WO disclosed
WO-2024018957-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2024-01-25 WO disclosed
WO-2023162653-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION 日産化学株式会社 2023-08-31 WO disclosed
WO-2023149553-A1 METHOD FOR IMPROVING HARDNESS OF FIRED PRODUCT 日産化学株式会社 2023-08-10 WO disclosed
WO-2023145923-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR NANOIMPRINTING 日産化学株式会社 2023-08-03 WO disclosed
WO-2023100506-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION INCLUDING HYDROXYCINNAMIC ACID DERIVATIVE 日産化学株式会社 2023-06-08 WO disclosed
WO-2022186231-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING BENZYLIDENE CYANOACETIC ACID ESTER GROUP 日産化学株式会社 2022-09-09 WO disclosed
WO-2021125036-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINTING 日産化学株式会社 2021-06-24 WO disclosed
WO-2021070775-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2021-04-15 WO disclosed
US-6326122-B1 HEAT SENSITIVE ELEMENTS MITSUBISHI CHEMICAL CORPORATION (JP) 2001-12-04 US disclosed
US-6313327-B1 Carboxylic acid derivatives and their synthesis method KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2001-11-06 US disclosed
US-6284430-B1 Positive-working chemical-amplification photoresist composition and method for forming a resist pattern using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2001-09-04 US disclosed
EP-0985975-A1 Positive-working chemical-amplification photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2000-03-15 EP disclosed
US-6033826-A POLYHYDROXYSTYRENE DERIVATIVE CONTAINING AN ACETAL OR KETAL GROUP WHICH CAN EASILY BE ELIMINATED IN THE PRESENCE OF AN ACID IN THE MOLECULE AND HAVING A VERY NARROW MOLECULAR WEIGHT DISTRIBUTION GIVES A RESIST MATERIAL WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2000-03-07 US disclosed
US-5723257-A POLYVINYLSILSESQUIOXANES OR OTHER POLYSILOXANES NEC CORPORATION (JP) 1998-03-03 US disclosed
EP-0823327-A2 Positive photosensitive composition, positive photosensitive lithographic printing plate and method for making positive photosensitive lithographic printing plate Mitsubishi Chemical Corporation (JP) 1998-02-11 EP disclosed
EP-0758102-A1 Terpolymers containing organosilicon side chains and their use for the production of relief structures OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1997-02-12 EP disclosed
US-5023164-A Highly sensitive dry developable deep UV photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1991-06-11 US disclosed
EP-0425411-A2 Highly sensitive dry developable deep UV photoresist International Business Machines Corporation (US) 1991-05-02 EP disclosed