SCHEMBL645902

SCHEMBL645902

FC(F)F.O=[Sb]([O-])([O-])[O-].c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.34

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.31
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL445270 0.91 FBP1 (0.31) ALDH1A1LMNA
SCHEMBL7118265 0.91 FBP1 (0.31) ALDH1A1LMNA
Fluoride Ion SCHEMBL7263684 0.88 FBP1 (0.30)
Fluoride Ion SCHEMBL7263681 0.88 FBP1 (0.30)
SCHEMBL927141 0.86
SCHEMBL8418924 0.86
SCHEMBL740608 0.86
SCHEMBL9171104 0.86
SCHEMBL4389080 0.85 ALDH1A1 (0.32) ALDH1A1
SCHEMBL1883593 0.76 CES1 (0.32) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0745633-B1 Si containing high molecular compound and photosensitive resin composition NEC CORP (JP) 2000-08-02 EP claimed
US-5723257-A POLYVINYLSILSESQUIOXANES OR OTHER POLYSILOXANES NEC CORPORATION (JP) 1998-03-03 US claimed
EP-0745633-A2 Si containing high molecular compound and photosensitive resin composition NEC CORPORATION (JP) 1996-12-04 EP claimed
US-20150076552-A1 SILICONE RESIN COMPOSITION, SEMI-CURED MATERIAL SHEET, PRODUCING METHOD OF SILICONE CURED MATERIAL, LIGHT EMITTING DIODE DEVICE, AND PRODUCING METHOD THEREOF NITTO DENKO CORPORATION (JP) 2015-03-19 US disclosed
US-20130341671-A1 SILICONE RESIN COMPOSITION, SEMI-CURED MATERIAL SHEET, PRODUCING METHOD OF SILICONE CURED MATERIAL, LIGHT EMITTING DIODE DEVICE, AND PRODUCING METHOD THEREOF NITTO DENKO CORPORATION (JP) 2013-12-26 US disclosed
EP-2677005-A1 Silicone resin composition, semi-cured material sheet, producing method of silicone cured material, light emitting diode device, and producing method thereof NITTO DENKO CORPORATION (JP) 2013-12-25 EP disclosed
US-8119323-B2 Process for producing patterned film and photosensitive resin composition SEKISUI CHEMICAL CO., LTD. (JP) 2012-02-21 US disclosed
US-20090206328-A1 Silicon-Containing Photosensitive Composition, Method for Forming Thin Film Pattern Using Same, Protective Film for Electronic Device, Gate Insulating Film And Thin Film Transistor Matsukawa, Kimihiro (JP) 2009-08-20 US disclosed
US-20090202942-A1 PROCESS FOR PRODUCING PATTERNED FILM AND PHOTOSENSITIVE RESIN COMPOSITION SEKISUI CHEMICAL CO., LTD. (JP) 2009-08-13 US disclosed
EP-1835344-A1 SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR FORMING THIN FILM PATTERN USING SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, GATE INSULATING FILM AND THIN FILM TRANSISTOR SEKISUI CHEMICAL CO., LTD. (JP) 2007-09-19 EP disclosed
US-6767983-B1 SILICONE RESINS HAVING SPECIFIED TRIORGANOSILYL GROUP LINKED TO ALL OR PART OF ENDS OF BACKBONE CHAIN OF POLYSILSESQUIOXANES; PHOTORESISTS NIPPON STEEL CHEMICAL CO., LTD. (JP) 2004-07-27 US disclosed
EP-1004936-B1 RESIST RESIN, RESIST RESIN COMPOSITION, AND PROCESS FOR PATTERNING THEREWITH SHOWA DENKO KK (JP) 2003-10-08 EP disclosed
US-6303268-B1 SENSITIVITY TO RADIATION SHOWA DENKO K.K. (JP) 2001-10-16 US disclosed
EP-0745633-B1 Si containing high molecular compound and photosensitive resin composition NEC CORP (JP) 2000-08-02 EP disclosed
EP-1004936-A1 RESIST RESIN, RESIST RESIN COMPOSITION, AND PROCESS FOR PATTERNING THEREWITH Showa Denko K K (JP) 2000-05-31 EP disclosed
US-5723257-A POLYVINYLSILSESQUIOXANES OR OTHER POLYSILOXANES NEC CORPORATION (JP) 1998-03-03 US disclosed
EP-0745633-A2 Si containing high molecular compound and photosensitive resin composition NEC CORPORATION (JP) 1996-12-04 EP disclosed