Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.41 |
| ▸ | TSHR | P16473 | 2/20 | 0.41 |
| ▸ | HTR6 | P50406 | 1/20 | 0.41 |
| ▸ | APOBEC3G | Q9HC16 | 1/20 | 0.39 |
| ▸ | CA1 | P00915 | 3/20 | 0.38 |
| ▸ | CA2 | P00918 | 3/20 | 0.38 |
| ▸ | CA5A | P35218 | 2/20 | 0.38 |
| ▸ | CA9 | Q16790 | 2/20 | 0.38 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
| ▸ | CA12 | O43570 | 1/20 | 0.38 |
| ▸ | CA3 | P07451 | 1/20 | 0.38 |
| ▸ | CA4 | P22748 | 1/20 | 0.38 |
| ▸ | CA6 | P23280 | 1/20 | 0.38 |
| ▸ | CA7 | P43166 | 1/20 | 0.38 |
| ▸ | PLA2G7 | Q13093 | 1/20 | 0.38 |
| ▸ | CA13 | Q8N1Q1 | 1/20 | 0.38 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.38 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23045338 | 0.86 | GAA (0.42) | ALDH1A1TSHRCA1CA2CA9 | |
| SCHEMBL15865829 | 0.86 | CA12 (0.42) | ALDH1A1CA1CA2CA9TDP1 | |
| SCHEMBL27898174 | 0.83 | TSHR (0.38) | ALDH1A1TSHRHTR6APOBEC3GCA1 | |
| SCHEMBL8829563 | 0.82 | HSD11B1 (0.46) | ALDH1A1TSHRCA1CA2HSD11B1 | |
| SCHEMBL29266699 | 0.78 | CA1 (0.39) | ALDH1A1TSHRHTR6CA1CA2 | |
| SCHEMBL6279692 | 0.77 | TSHR (0.41) | ALDH1A1TSHRHTR6APOBEC3GCA1 | |
| SCHEMBL2470750 | 0.76 | HTR6 (0.42) | ALDH1A1TSHRHTR6APOBEC3GCA1 | |
| SCHEMBL21585240 | 0.74 | ALDH1A1 (0.39) | ALDH1A1TSHRHTR6APOBEC3GCA1 | |
| SCHEMBL777153 | 0.72 | HTR6 (0.50) | ALDH1A1TSHRHTR6APOBEC3GCA1 | |
| Perflubutane SCHEMBL28185214 | 0.71 | HSD11B1 (0.41) | ALDH1A1TSHRCA1CA2MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119087744-A | Immersion photoresist composition | 万华化学集团股份有限公司 | 2024-12-06 | — | — | CN | claimed |
| CN-118732392-A | Photoresist composition and preparation method thereof | 万华化学集团股份有限公司 | 2024-10-01 | — | — | CN | claimed |
| CN-118295208-A | Chemical amplification type photoresist and preparation method and application thereof | 万华化学集团股份有限公司 | 2024-07-05 | — | — | CN | claimed |
| EP-0745633-B1 | Si containing high molecular compound and photosensitive resin composition | NEC CORP (JP) | 2000-08-02 | — | — | EP | claimed |
| CN-119087744-A | Immersion photoresist composition | 万华化学集团股份有限公司 | 2024-12-06 | — | — | CN | disclosed |
| CN-118732392-A | Photoresist composition and preparation method thereof | 万华化学集团股份有限公司 | 2024-10-01 | — | — | CN | disclosed |
| CN-118295208-A | Chemical amplification type photoresist and preparation method and application thereof | 万华化学集团股份有限公司 | 2024-07-05 | — | — | CN | disclosed |
| WO-2024029445-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION, AND RESIST PATTERN FORMATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING SAID COMPOSITION | 日産化学株式会社 | 2024-02-08 | — | — | WO | disclosed |
| WO-2024018957-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2024-01-25 | — | — | WO | disclosed |
| WO-2023162653-A1 | RESIST UNDERLAYER FILM FORMATION COMPOSITION | 日産化学株式会社 | 2023-08-31 | — | — | WO | disclosed |
| WO-2023149553-A1 | METHOD FOR IMPROVING HARDNESS OF FIRED PRODUCT | 日産化学株式会社 | 2023-08-10 | — | — | WO | disclosed |
| WO-2023145923-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION FOR NANOIMPRINTING | 日産化学株式会社 | 2023-08-03 | — | — | WO | disclosed |
| US-7202011-B2 | Photosensitive polymer including fluorine and resist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-04-10 | — | — | US | disclosed |
| US-20060281025-A1 | Chemically amplified resist material and pattern formation method using the same | BARINGS FINANCE LLC, AS COLLATERAL AGENT | 2006-12-14 | — | — | US | disclosed |
| US-20060148266-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2006-07-06 | — | — | US | disclosed |
| US-20030228537-A1 | Photosensitive polymer including fluorine and resist composition containing the same | SAMSUNG ELECTRONICS CO.; LTD. (KR) | 2003-12-11 | — | — | US | disclosed |
| US-6313327-B1 | Carboxylic acid derivatives and their synthesis method | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2001-11-06 | — | — | US | disclosed |
| US-5380882-A | Phenylacetates and the use thereof | CIBA-GEIGY CORPORATION (US) | 1995-01-10 | — | — | US | disclosed |
| US-5023164-A | Highly sensitive dry developable deep UV photoresist | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1991-06-11 | — | — | US | disclosed |
| EP-0425411-A2 | Highly sensitive dry developable deep UV photoresist | International Business Machines Corporation (US) | 1991-05-02 | — | — | EP | disclosed |