SCHEMBL438933

SCHEMBL438933

CC(O)(C1CC2CCC1C2)C(F)(F)F

nearest known ligand 0.35

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
CYP19A1 P11511 1/20 0.35
HSD11B1 P28845 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18560088 1.00 CYP19A1 (0.35) CYP19A1HSD11B1
SCHEMBL9908352 0.79 CYP19A1 (0.30) CYP19A1
SCHEMBL75233 0.79 CYP19A1 (0.36) CYP19A1
SCHEMBL17070182 0.79 CYP19A1 (0.30) CYP19A1
SCHEMBL14527514 0.79 CYP19A1 (0.36) CYP19A1
SCHEMBL9934752 0.79 CYP19A1 (0.38) CYP19A1HSD11B1
SCHEMBL5194124 0.79 CYP19A1 (0.38) CYP19A1HSD11B1
SCHEMBL3435218 0.79 CYP19A1 (0.32) CYP19A1
SCHEMBL5194757 0.79 CYP19A1 (0.38) CYP19A1HSD11B1
SCHEMBL9908335 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 342 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12038691-B2 Method for producing substrate with patterned film CENTRAL GLASS COMPANY, LIMITED (JP) 2024-07-16 US disclosed
US-12038692-B2 Method for producing substrate with patterned film and fluorine-containing copolymer CENTRAL GLASS COMPANY, LIMITED (JP) 2024-07-16 US disclosed
US-20240215891-A1 Bio-Electrode Composition, Bio-Electrode, And Method For Manufacturing Bio-Electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-04 US disclosed
US-20240215890-A1 Bio-Electrode, Bio-Electrode Composition, And Method For Manufacturing Bio-Electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-04 US disclosed
US-20240210830-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20110045387-A1 Method of Forming a Relief Pattern by E-Beam Lithography Using Chemical Amplification, and Derived Articles INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-02-24 US disclosed
EP-2105794-A1 Novel photoacid generator, resist composition, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-09-30 EP disclosed
US-20090226843-A1 MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-10 US disclosed
US-7550247-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-06-23 US disclosed
US-20080311514-A1 SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-18 US disclosed
US-20080311514-A1 SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-18 US disclosed
US-20080038664-A1 Silsesquioxane compound mixture, method of making, resist composition, and patterning process SHIN-ETSU CHEMICAL CO. LTD. (JP) 2008-02-14 US disclosed
US-20080038664-A1 Silsesquioxane compound mixture, method of making, resist composition, and patterning process SHIN-ETSU CHEMICAL CO. LTD. (JP) 2008-02-14 US disclosed
US-7265234-B2 Silsesquioxane compound mixture, method of making, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-04 US disclosed
US-7265234-B2 Silsesquioxane compound mixture, method of making, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311514-A1 SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING STS, LSS, SRMS CYP19A1 134/4885HSD11B1 221/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 CYP19A1 4640/4885HSD11B1 2019/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.