Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Bicarbonate. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | THRB | P10828 | 1/20 | 0.37 |
| ▸ | PDK1 | Q15118 | 1/20 | 0.34 |
| ▸ | PDK2 | Q15119 | 1/20 | 0.34 |
| ▸ | PDK3 | Q15120 | 1/20 | 0.34 |
| ▸ | PDK4 | Q16654 | 1/20 | 0.34 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.32 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.32 |
| ▸ | CES2 | O00748 | 1/20 | 0.31 |
| ▸ | CES1 | P23141 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL896105 | 0.89 | — | — | |
| SCHEMBL1280243 | 0.87 | LMNA (0.32) | — | |
| SCHEMBL3942494 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL8096460 | 0.84 | — | — | |
| SCHEMBL7051330 | 0.82 | — | — | |
| SCHEMBL9561008 | 0.76 | THRB (0.39) | THRB | |
| Bicarbonate SCHEMBL7556709 | 0.75 | CES2 (0.38) | PDK1PDK2PDK3PDK4KEAP1 | |
| SCHEMBL13604512 | 0.74 | — | — | |
| SCHEMBL664429 | 0.71 | PDK1 (0.30) | PDK1PDK2PDK3PDK4 | |
| SCHEMBL6114332 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-109559980-B | Method of manufacturing integrated circuit device | 三星电子株式会社 | 2024-02-23 | — | — | CN | disclosed |
| US-20220181146-A1 | METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-06-09 | — | — | US | disclosed |
| US-11069580-B2 | Method of manufacturing a semiconductor device including a plurality of channel patterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-07-20 | — | — | US | disclosed |
| US-20210013110-A1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A PLURALITY OF CHANNEL PATTERNS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-01-14 | — | — | US | disclosed |
| US-10732506-B2 | Method of fabricating integrated circuit devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-08-04 | — | — | US | disclosed |
| US-20190096662-A1 | METHOD OF FABRICATING INTEGRATED CIRCUIT DEVICES | SAMSUNG ELECTRONICS CO., LTD (KR) | 2019-03-28 | — | — | US | disclosed |
| US-10134606-B2 | Method of forming patterns and method of manufacturing integrated circuit device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-11-20 | — | — | US | disclosed |
| US-9773672-B2 | Method of forming micropatterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-09-26 | — | — | US | disclosed |
| US-9613821-B2 | Method of forming patterns and method of manufacturing integrated circuit device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-04-04 | — | — | US | disclosed |
| US-9437452-B2 | Method of forming a fine pattern by using block copolymers | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-09-06 | — | — | US | disclosed |
| CN-101572226-B | Method of forming fine patterns of semiconductor device | SAMSUNG ELECTRONICS CO LTD | 2013-04-24 | — | — | CN | disclosed |
| US-8314036-B2 | Methods of forming fine patterns of semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-11-20 | — | — | US | disclosed |
| US-20120064724-A1 | Methods of Forming a Pattern of Semiconductor Devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-03-15 | — | — | US | disclosed |
| US-20120064463-A1 | Method of Forming Micropatterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-03-15 | — | — | US | disclosed |
| CN-102347216-A | Method of manufacturing semiconductor device using acid diffusion | SAMSUNG ELECTRONICS CO LTD | 2012-02-08 | — | — | CN | disclosed |
| US-20120028434-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ACID DIFFUSION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-02-02 | — | — | US | disclosed |
| US-20110244689-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-10-06 | — | — | US | disclosed |
| US-20110027993-A1 | METHODS OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KP) | 2011-02-03 | — | — | US | disclosed |
| US-20090274980-A1 | METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE BY USING DOUBLE PATTERNING PROCESS WHICH USES ACID DIFFUSION | SAMSUNG ELECTRONICS CO., LTD. | 2009-11-05 | — | — | US | disclosed |
| CN-101572226-A | Method of forming fine patterns of semiconductor device | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-11-04 | — | — | CN | disclosed |