Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3871061 | 0.83 | CNR2 (0.36) | — | |
| SCHEMBL906300 | 0.76 | ALDH1A1 (0.36) | ALDH1A1SMN1; SMN2HSD17B10 | |
| Potassium Ion SCHEMBL1305480 | 0.76 | ALDH1A1 (0.36) | ALDH1A1SMN1; SMN2HSD17B10 | |
| SCHEMBL1305795 | 0.76 | ALDH1A1 (0.36) | ALDH1A1SMN1; SMN2HSD17B10 | |
| SCHEMBL1401234 | 0.76 | ALDH1A1 (0.36) | ALDH1A1SMN1; SMN2HSD17B10 | |
| Lithium Ion SCHEMBL1458084 | 0.76 | ALDH1A1 (0.36) | ALDH1A1SMN1; SMN2HSD17B10 | |
| SCHEMBL15065488 | 0.76 | ALDH1A1 (0.36) | ALDH1A1SMN1; SMN2HSD17B10 | |
| SCHEMBL20162191 | 0.76 | ALDH1A1 (0.36) | ALDH1A1SMN1; SMN2HSD17B10 | |
| Silver SCHEMBL219594 | 0.76 | ALDH1A1 (0.36) | ALDH1A1SMN1; SMN2HSD17B10 | |
| SCHEMBL3881822 | 0.76 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 138 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12572075-B2 | Composition, method of forming resist underlayer film, and method of forming resist pattern | JSR CORPORATION (JP) | 2026-03-10 | — | — | US | disclosed |
| US-20230041656-A1 | COMPOSITION, METHOD OF FORMING RESIST UNDERLAYER FILM, AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-02-09 | — | — | US | disclosed |
| US-11204552-B2 | Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent | JSR CORPORATION (JP) | 2021-12-21 | — | — | US | disclosed |
| US-20210286267-A1 | COMPOSITION, RESIST UNDERLAYER FILM, AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2021-09-16 | — | — | US | disclosed |
| EP-3229075-B1 | PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN | JSR CORP (JP) | 2021-01-06 | — | — | EP | disclosed |
| US-10725376-B2 | Pattern-forming method | JSR CORPORATION (JP) | 2020-07-28 | — | — | US | disclosed |
| US-20200041902-A9 | RADIATION-SENSITIVE COMPOSITION, PATTERN-FORMING METHOD AND RADIATION-SENSITIVE ACID GENERATING AGENT | JSR CORPORATION (JP) | 2020-02-06 | — | — | US | disclosed |
| US-20190155162-A1 | PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT | JSR CORPORATION (JP) | 2019-05-23 | — | — | US | disclosed |
| US-20190033713-A1 | RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2019-01-31 | — | — | US | disclosed |
| US-10146130-B2 | Composition for base, and directed self-assembly lithography method | JSR CORPORATION (JP) | 2018-12-04 | — | — | US | disclosed |
| EP-1767539-A1 | ORGANIC ANTIMONY COMPOUND, PROCESS FOR PRODUCING THE SAME, LIVING RADICAL POLYMERIZATION INITIATOR, PROCESS FOR PRODUCING POLYMER USING THE SAME, AND POLYMER | OTSUKA CHEMICAL COMPANY, LTD. (JP) | 2007-03-28 | — | — | EP | disclosed |
| EP-1757980-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 2007-02-28 | — | — | EP | disclosed |
| US-20070042292-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2007-02-22 | — | — | US | disclosed |
| US-20060234153-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060234154-A1 | Mixture containing acid generator and free radical catalyst; acrylated ester monomer | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| EP-1652866-A1 | ACRYLIC POLYMERS AND RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2006-05-03 | — | — | EP | disclosed |
| US-20060074139-A1 | Acrylic copolymer and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-04-06 | — | — | US | disclosed |
| EP-1602975-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-12-07 | — | — | EP | disclosed |
| EP-1586594-A1 | ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-10-19 | — | — | EP | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12572075-B2 | Composition, method of forming resist underlayer film, and method of forming resist pattern | TOP1, NAF1, ASH2L | ALDH1A1 2358/4885SMN1; SMN2 3601/4885HSD17B10 1902/4885 |
| US-11204552-B2 | Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent | NOS1, ADCY1, IFNAR1 | ALDH1A1 243/4885SMN1; SMN2 3352/4885HSD17B10 4080/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.