SCHEMBL447053

SCHEMBL447053

CCCCOc1ccc(S2(OS(=O)(=O)C(F)(F)C(F)(F)C3CC4CCC3C4)CCCC2)c2ccccc12

nearest known ligand 0.33

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
SLC2A1 P11166 2/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
FABP4 P15090 8/20 0.32
FABP5 Q01469 8/20 0.32
CNR1 P21554 1/20 0.31
CNR2 P34972 1/20 0.31
HTT P42858 1/20 0.31
MCOLN3 Q8TDD5 1/20 0.31
ALDH1A1 P00352 1/20 0.31
LMNA P02545 1/20 0.31
TSHR P16473 1/20 0.31
GAA P10253 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
FABP3 P05413 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5866206 0.92 ALDH1A1 (0.38) MEN1KMT2AFABP4HTTMCOLN3
SCHEMBL5866199 0.88 ALDH1A1 (0.33) MEN1KMT2AHTTALDH1A1LMNA
SCHEMBL27826072 0.87 KMT2A (0.33) SLC2A1MEN1KMT2AFABP4FABP5
SCHEMBL2542343 0.86 MEN1 (0.33) SLC2A1MEN1KMT2ACNR1CNR2
SCHEMBL17183021 0.83 CACNA1B (0.31)
SCHEMBL36281 0.82 SLC2A1 (0.41) SLC2A1MEN1KMT2AFABP4FABP5
SCHEMBL190940 0.81 SLC2A1 (0.38) SLC2A1MEN1KMT2AFABP4FABP5
SCHEMBL1357195 0.81 FABP4 (0.32) SLC2A1MEN1KMT2AFABP4FABP5
SCHEMBL448403 0.81 SLC2A1 (0.37) SLC2A1MEN1KMT2AFABP4FABP5
SCHEMBL1356696 0.80 FABP4 (0.32) SLC2A1FABP4FABP5CNR1CNR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 257 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12631962-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
US-12624392-B2 Molecular array generation using photoresist 10X GENOMICS, INC. (US) 2026-05-12 US disclosed
US-12560866-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound JSR CORPORATION (JP) 2026-02-24 US disclosed
US-12393115-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2025-08-19 US disclosed
US-12265333-B2 Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound JSR CORPORATION (JP) 2025-04-01 US disclosed
EP-4481059-A2 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2024-12-25 EP disclosed
EP-4405094-B1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-12-18 EP disclosed
EP-4271511-B1 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-10-09 EP disclosed
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
US-20240167077-A1 COVALENT ATTACHMENT OF SPLINT OLIGONUCLEOTIDES FOR MOLECULAR ARRAY GENERATION USING LIGATION 10X GENOMICS, INC. (US) 2024-05-23 US disclosed
EP-1757628-A1 LACTONE COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2007-02-28 EP disclosed
EP-1757980-A1 Radiation sensitive resin composition JSR Corporation (JP) 2007-02-28 EP disclosed
US-20070042292-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-02-22 US disclosed
US-7144675-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-12-05 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-20060234154-A1 Mixture containing acid generator and free radical catalyst; acrylated ester monomer JSR CORPORATION (JP) 2006-10-19 US disclosed
EP-1600437-A1 ACID GENERATORS, SULFONIC ACIDS, SULFONYL HALIDES, AND RADIATION-SENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2005-11-30 EP disclosed
EP-1586594-A1 ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-10-19 EP disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12631962-B2 Resist composition and method for forming resist pattern TERB1, TERF2, LSM8 SLC2A1 3348/4885MEN1 712/4885KMT2A 210/4885
US-12624392-B2 Molecular array generation using photoresist POLL, LIG4, LIG3 SLC2A1 4470/4885MEN1 4778/4885KMT2A 619/4885
US-12265333-B2 Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound TOP1, RER1, ABCC1 SLC2A1 2313/4885MEN1 660/4885KMT2A 196/4885
US-12560866-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound RAD51, RER1, RAD1 SLC2A1 3218/4885MEN1 512/4885KMT2A 2433/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.