Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC2A1 | P11166 | 2/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.39 |
| ▸ | MEN1 | O00255 | 2/20 | 0.39 |
| ▸ | GAA | P10253 | 1/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.39 |
| ▸ | CNR1 | P21554 | 3/20 | 0.38 |
| ▸ | CNR2 | P34972 | 3/20 | 0.38 |
| ▸ | FABP4 | P15090 | 6/20 | 0.38 |
| ▸ | FABP5 | Q01469 | 6/20 | 0.38 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.35 |
| ▸ | WDR5 | P61964 | 1/20 | 0.35 |
| ▸ | TSHR | P16473 | 2/20 | 0.35 |
| ▸ | PTGDR2 | Q9Y5Y4 | 1/20 | 0.35 |
| ▸ | HTT | P42858 | 1/20 | 0.34 |
| ▸ | MCOLN3 | Q8TDD5 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL703653 | 0.94 | KMT2A (0.44) | SLC2A1KMT2AMEN1GAATDP1 | |
| SCHEMBL36663 | 0.90 | TSHR (0.43) | SLC2A1KMT2AMEN1GAATDP1 | |
| SCHEMBL2520945 | 0.89 | HTT (0.36) | SLC2A1KMT2AMEN1FABP4FABP5 | |
| SCHEMBL190940 | 0.89 | SLC2A1 (0.38) | SLC2A1KMT2AMEN1GAATDP1 | |
| SCHEMBL1057944 | 0.89 | ALOX5 (0.34) | SLC2A1KMT2AMEN1L3MBTL1TSHR | |
| SCHEMBL448403 | 0.88 | SLC2A1 (0.37) | SLC2A1KMT2AMEN1GAATDP1 | |
| SCHEMBL3883695 | 0.88 | SLC2A1 (0.42) | SLC2A1KMT2AMEN1GAATDP1 | |
| SCHEMBL2521409 | 0.87 | ELANE (0.39) | SLC2A1TDP1L3MBTL1CNR1CNR2 | |
| SCHEMBL2517298 | 0.86 | TSHR (0.35) | SLC2A1KMT2AMEN1GAATDP1 | |
| SCHEMBL7047138 | 0.86 | PTGS2 (0.39) | SLC2A1KMT2AMEN1GAATDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 695 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2026-05-19 | — | — | US | disclosed |
| US-12624392-B2 | Molecular array generation using photoresist | 10X GENOMICS, INC. (US) | 2026-05-12 | — | — | US | disclosed |
| US-12572075-B2 | Composition, method of forming resist underlayer film, and method of forming resist pattern | JSR CORPORATION (JP) | 2026-03-10 | — | — | US | disclosed |
| US-12560866-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | JSR CORPORATION (JP) | 2026-02-24 | — | — | US | disclosed |
| US-12393115-B2 | Positive working photosensitive material | MERCK PATENT GMBH (DE) | 2025-08-19 | — | — | US | disclosed |
| US-12386260-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | JSR CORPORATION (JP) | 2025-08-12 | — | — | US | disclosed |
| US-20250244667-A1 | COMPOSITION | MERCK PATENT GMBH (DE) | 2025-07-31 | — | — | US | disclosed |
| US-20250199403-A1 | COMPOSITION INCLUDING ALKALINE-SOLUBLE POLYMER AND COLORANT | MERCK ELECTRONICS KGAA (DE) | 2025-06-19 | — | — | US | disclosed |
| US-12265333-B2 | Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound | JSR CORPORATION (JP) | 2025-04-01 | — | — | US | disclosed |
| EP-4516394-A2 | HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST | 10x Genomics, Inc. (US) | 2025-03-05 | — | — | EP | disclosed |
| WO-2005003198-A1 | PHOTORESIST POLYMER COMPOSITIONS | JSR CORPORATION (JP) | 2005-01-13 | — | — | WO | disclosed |
| US-6800419-B2 | FOR USE AS CHEMICALLY-AMPLIFIED RESIST FOR MICROFABRICATION UTILIZING DEEP ULTRAVIOLET RAYS AND EXHIBITS EXCELLENT FILM THICKNESS UNIFORMITY AND STORAGE STABILITY | JSR CORPORATION (JP) | 2004-10-05 | — | — | US | disclosed |
| US-20040072094-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2004-04-15 | — | — | US | disclosed |
| US-20040048192-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-03-11 | — | — | US | disclosed |
| US-20030219680-A1 | Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams | JSR CORPORATION (JP) | 2003-11-27 | — | — | US | disclosed |
| US-20030203309-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030203307-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030157423-A1 | Copolymer, polymer mixture, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-08-21 | — | — | US | disclosed |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TERB1, TERF2, LSM8 | SLC2A1 3348/4885KMT2A 210/4885MEN1 712/4885 |
| US-12572075-B2 | Composition, method of forming resist underlayer film, and method of forming resist pattern | TOP1, NAF1, ASH2L | SLC2A1 2211/4885KMT2A 511/4885MEN1 1539/4885 |
| US-12624392-B2 | Molecular array generation using photoresist | POLL, LIG4, LIG3 | SLC2A1 4470/4885KMT2A 619/4885MEN1 4778/4885 |
| US-12265333-B2 | Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound | TOP1, RER1, ABCC1 | SLC2A1 2313/4885KMT2A 196/4885MEN1 660/4885 |
| US-12560866-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | RAD51, RER1, RAD1 | SLC2A1 3218/4885KMT2A 2433/4885MEN1 512/4885 |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | ASIC1, PFAS, RARA | SLC2A1 1338/4885KMT2A 1845/4885MEN1 3910/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.