Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL13518183 | 1.00 | — | — | |
| Water SCHEMBL21197430 | 0.87 | — | — | |
| Water SCHEMBL28958786 | 0.87 | — | — | |
| Water SCHEMBL28958780 | 0.87 | — | — | |
| Water SCHEMBL19180770 | 0.87 | — | — | |
| Water SCHEMBL23300512 | 0.87 | — | — | |
| Water SCHEMBL29004132 | 0.87 | — | — | |
| Water SCHEMBL3147953 | 0.82 | — | — | |
| SCHEMBL7568161 | 0.82 | — | — | |
| Water SCHEMBL22041615 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 89 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115920924-B | Silver-loaded lanthanum nickel hydroxide composite graphite phase carbon nitride heterojunction photocatalyst and preparation method thereof | 厦门大学 | 2024-06-28 | — | — | CN | claimed |
| CN-115920924-A | Silver-loaded lanthanum nickel hydroxide composite graphite-phase carbon nitride heterojunction photocatalyst and preparation method thereof | 厦门大学 | 2023-04-07 | — | — | CN | claimed |
| CN-100550453-C | The resistance current-limiting apparatus that has bar shaped high-tc-super conductor body | SIEMENS AG (DE) | 2009-10-14 | — | — | CN | claimed |
| CN-101036244-A | Resistive current limiting device with strip high critical temperature superconductor | SIEMENS AG (DE) | 2007-09-12 | — | — | CN | claimed |
| CN-115920924-B | Silver-loaded lanthanum nickel hydroxide composite graphite phase carbon nitride heterojunction photocatalyst and preparation method thereof | 厦门大学 | 2024-06-28 | — | — | CN | disclosed |
| CN-115920924-B | Silver-loaded lanthanum nickel hydroxide composite graphite phase carbon nitride heterojunction photocatalyst and preparation method thereof | 厦门大学 | 2024-06-28 | — | — | CN | disclosed |
| CN-115920924-B | Silver-loaded lanthanum nickel hydroxide composite graphite phase carbon nitride heterojunction photocatalyst and preparation method thereof | 厦门大学 | 2024-06-28 | — | — | CN | disclosed |
| CN-115920924-A | Silver-loaded lanthanum nickel hydroxide composite graphite-phase carbon nitride heterojunction photocatalyst and preparation method thereof | 厦门大学 | 2023-04-07 | — | — | CN | disclosed |
| CN-115920924-A | Silver-loaded lanthanum nickel hydroxide composite graphite-phase carbon nitride heterojunction photocatalyst and preparation method thereof | 厦门大学 | 2023-04-07 | — | — | CN | disclosed |
| CN-115920924-A | Silver-loaded lanthanum nickel hydroxide composite graphite-phase carbon nitride heterojunction photocatalyst and preparation method thereof | 厦门大学 | 2023-04-07 | — | — | CN | disclosed |
| CN-115395025-A | Solid oxide fuel cell cathode membrane based on electrospun nanofibers and in-situ preparation method thereof | 佛山科学技术学院 | 2022-11-25 | — | — | CN | disclosed |
| CN-115395025-A | Solid oxide fuel cell cathode membrane based on electrospun nanofibers and in-situ preparation method thereof | 佛山科学技术学院 | 2022-11-25 | — | — | CN | disclosed |
| US-20080144357-A1 | Method for sensing a signal in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION (US) | 2008-06-19 | — | — | US | disclosed |
| US-7379364-B2 | Sensing a signal in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION | 2008-05-27 | — | — | US | disclosed |
| US-7372753-B1 | Two-cycle sensing in a two-terminal memory array having leakage current | UNITY SEMICONDUCTOR CORPORATION | 2008-05-13 | — | — | US | disclosed |
| US-20080094929-A1 | TWO-CYCLE SENSING IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT | III HOLDINGS 1, LLC | 2008-04-24 | — | — | US | disclosed |
| US-20080094876-A1 | SENSING A SIGNAL IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT | UNITY SEMICONDUCTOR, INC. | 2008-04-24 | — | — | US | disclosed |
| US-20080084727-A1 | Scaleable memory systems using third dimension memory | UNITY SEMICONDUCTOR, INC. | 2008-04-10 | — | — | US | disclosed |
| CN-101036244-A | Resistive current limiting device with strip high critical temperature superconductor | SIEMENS AG (DE) | 2007-09-12 | — | — | CN | disclosed |
| US-20070105390-A1 | Oxygen depleted etching process | UNITY SEMICONDUCTOR, INC. | 2007-05-10 | — | — | US | disclosed |