SCHEMBL450357

SCHEMBL450357

O=S(=O)(OS(c1ccccc1)(c1ccccc1)c1ccccc1)c1ccc2ccc3cccc4ccc1c2c34

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 8/20 0.38
HPGD P15428 6/20 0.38
KMT2A Q03164 4/20 0.38
KDM4E B2RXH2 4/20 0.38
MEN1 O00255 2/20 0.38
MAPT P10636 2/20 0.38
HTT P42858 1/20 0.38
CYP1A2 P05177 4/20 0.38
ERBB2 P04626 1/20 0.38
FYN P06241 1/20 0.38
MAOA P21397 1/20 0.38
ACHE P22303 1/20 0.38
AHR P35869 1/20 0.38
HSD17B10 Q99714 4/20 0.36
THRB P10828 1/20 0.36
CYP3A4 P08684 2/20 0.36
TSHR P16473 2/20 0.36
TDP1 Q9NUW8 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
GLA P06280 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3205028 0.92 ALDH1A1 (0.40) ALDH1A1HPGDKMT2AKDM4EMEN1
SCHEMBL453182 0.90 HSD17B2 (0.39) ALDH1A1HPGDKMT2AKDM4EMEN1
SCHEMBL3195413 0.90 LMNA (0.45) ALDH1A1KMT2AKDM4EHTTTDP1
SCHEMBL3199458 0.89 ALDH1A1 (0.36) ALDH1A1HPGDKMT2AKDM4EMEN1
SCHEMBL3204718 0.88 F2 (0.33) ALDH1A1HPGDKMT2AKDM4EMEN1
SCHEMBL15675804 0.87 ENPP2 (0.35) ALDH1A1HPGDKMT2AKDM4EMEN1
SCHEMBL449950 0.85 LMNA (0.45) ALDH1A1KMT2AKDM4EHTTTDP1
SCHEMBL27823782 0.84 ALDH1A1 (0.42) ALDH1A1HPGDKMT2AKDM4EMEN1
SCHEMBL598024 0.81 CA1 (0.50) ALDH1A1KMT2AMEN1MAPTTSHR
SCHEMBL3183444 0.80 PTPN1 (0.40) ALDH1A1HPGDKMT2AMEN1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 185 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122043858-A EUV patterned resist formation method 亚历克斯·P·G·罗宾逊 2026-05-15 CN disclosed
US-11970557-B2 Polymer containing photoacid generator LG CHEM, LTD. (KR) 2024-04-30 US disclosed
EP-3010943-B1 CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM CANON KK (JP) 2024-04-03 EP disclosed
US-11681227-B2 Enhanced EUV photoresist materials, formulations and processes IRRESISTIBLE MATERIALS LTD (GB) 2023-06-20 US disclosed
US-11592605-B2 Color developing structure having concave-convex layer, method for producing such structure, and display TOPPAN PRINTING CO., LTD. (JP) 2023-02-28 US disclosed
CN-114975098-A Nanoimprint liquid material, method for producing pattern of cured product, and method for producing circuit board 佳能株式会社 2022-08-30 CN disclosed
CN-107251193-B Nanoimprint liquid material, method for producing pattern of cured product, method for producing optical component, and method for producing circuit board 佳能株式会社 2022-06-21 CN disclosed
US-11332597-B2 Photo-curable composition and patterning method using the same CANON KABUSHIKI KAISHA (JP) 2022-05-17 US disclosed
CN-111699206-B Polymers comprising photoacid generators 株式会社LG化学 2022-05-10 CN disclosed
CN-113994256-A Method for forming EUV patterned resist 亚历克斯·P·G·罗宾逊 2022-01-28 CN disclosed
EP-1164433-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010041769-A1 Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition JSR CORPORATION (JP) 2001-11-15 US disclosed
EP-1142928-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR Corporation (JP) 2001-10-10 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed
US-6136500-A CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION JSR CORPORATION (JP) 2000-10-24 US disclosed
EP-1035436-A1 Resist pattern formation method JSR Corporation (JP) 2000-09-13 EP disclosed
EP-1011029-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2000-06-21 EP disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed