Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 7/20 | 0.46 |
| ▸ | HSD11B1 | P28845 | 3/20 | 0.45 |
| ▸ | NPC1 | O15118 | 2/20 | 0.44 |
| ▸ | RAB9A | P51151 | 2/20 | 0.44 |
| ▸ | RECQL | P46063 | 1/20 | 0.44 |
| ▸ | ACHE | P22303 | 1/20 | 0.42 |
| ▸ | MAPT | P10636 | 1/20 | 0.42 |
| ▸ | LMNA | P02545 | 2/20 | 0.41 |
| ▸ | HTT | P42858 | 1/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.41 |
| ▸ | HSD17B3 | P37058 | 1/20 | 0.41 |
| ▸ | UQCRB | P14927 | 1/20 | 0.41 |
| ▸ | HSD17B2 | P37059 | 1/20 | 0.41 |
| ▸ | CA1 | P00915 | 2/20 | 0.40 |
| ▸ | CA2 | P00918 | 2/20 | 0.40 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.40 |
| ▸ | MAOA | P21397 | 1/20 | 0.40 |
| ▸ | NR3C2 | P08235 | 1/20 | 0.39 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.39 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8131241 | 0.93 | ALDH1A1 (0.52) | ALDH1A1HSD11B1NPC1RAB9AACHE | |
| SCHEMBL7738075 | 0.92 | NR3C2 (0.50) | ALDH1A1HSD11B1NPC1RAB9ARECQL | |
| SCHEMBL7733592 | 0.88 | ALDH1A1 (0.45) | ALDH1A1HSD11B1NPC1RAB9ARECQL | |
| SCHEMBL7739943 | 0.88 | MAOA (0.43) | ALDH1A1HSD11B1NPC1RAB9ARECQL | |
| SCHEMBL51290 | 0.87 | TSHR (0.50) | ALDH1A1HSD11B1NPC1RAB9AACHE | |
| SCHEMBL217706 | 0.86 | ALDH1A1 (0.48) | ALDH1A1HSD11B1NPC1RAB9AACHE | |
| SCHEMBL503480 | 0.85 | ALDH1A1 (0.44) | ALDH1A1HSD11B1ACHELMNACA1 | |
| SCHEMBL8131239 | 0.85 | ALDH1A1 (0.44) | ALDH1A1HSD11B1NPC1RAB9AACHE | |
| SCHEMBL2961938 | 0.85 | HSD11B1 (0.46) | ALDH1A1HSD11B1NPC1RAB9AACHE | |
| Sulfuric Acid SCHEMBL5068665 | 0.84 | ALDH1A1 (0.52) | ALDH1A1HSD11B1NPC1RAB9AACHE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 289 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122043858-A | EUV patterned resist formation method | 亚历克斯·P·G·罗宾逊 | 2026-05-15 | — | — | CN | disclosed |
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| CN-119422108-A | Resist composition and method for forming resist film using same | 三菱瓦斯化学株式会社 | 2025-02-11 | — | — | CN | disclosed |
| US-20240369924-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| EP-3010943-B1 | CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM | CANON KK (JP) | 2024-04-03 | — | — | EP | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11681227-B2 | Enhanced EUV photoresist materials, formulations and processes | IRRESISTIBLE MATERIALS LTD (GB) | 2023-06-20 | — | — | US | disclosed |
| EP-1167349-A1 | Chemical amplifying type positive resist composition and sulfonium salt | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2002-01-02 | — | — | EP | disclosed |
| EP-1164433-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-12-19 | — | — | EP | disclosed |
| US-20010023050-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-09-20 | — | — | US | disclosed |
| US-6280900-B1 | RADIATION SENSITIVE COMPOSITION WITH ALKALINE DEVELOPER SOLUBLE IN POLYMER COATED ON SUBSTRATE | JSR CORPORATION (JP) | 2001-08-28 | — | — | US | disclosed |
| EP-1122605-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| US-6235446-B1 | MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER | JSR CORPORATION (JP) | 2001-05-22 | — | — | US | disclosed |
| US-6136500-A | CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION | JSR CORPORATION (JP) | 2000-10-24 | — | — | US | disclosed |
| EP-1035436-A1 | Resist pattern formation method | JSR Corporation (JP) | 2000-09-13 | — | — | EP | disclosed |
| EP-1011029-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2000-06-21 | — | — | EP | disclosed |
| EP-0898201-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-02-24 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | ALDH1A1 3830/4885HSD11B1 2144/4885NPC1 2326/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.