Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.47 |
| ▸ | ABCB1 | P08183 | 5/20 | 0.45 |
| ▸ | PSIP1 | O75475 | 1/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.41 |
| ▸ | TSHR | P16473 | 1/20 | 0.41 |
| ▸ | ABCC1 | P33527 | 3/20 | 0.39 |
| ▸ | MMP1 | P03956 | 1/20 | 0.38 |
| ▸ | MMP9 | P14780 | 1/20 | 0.38 |
| ▸ | MMP13 | P45452 | 1/20 | 0.38 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.38 |
| ▸ | HTT | P42858 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1664176 | 1.00 | TDP1 (0.47) | TDP1ABCB1PSIP1ALDH1A1TSHR | |
| SCHEMBL562842 | 0.93 | TDP1 (0.50) | TDP1ABCB1PSIP1ALDH1A1TSHR | |
| SCHEMBL3193368 | 0.93 | MCHR1 (0.43) | TDP1ABCB1ALDH1A1ABCC1HTT | |
| SCHEMBL3203459 | 0.91 | TDP1 (0.41) | TDP1ABCB1ALDH1A1TSHRABCC1 | |
| SCHEMBL3190153 | 0.90 | PTGS2 (0.44) | TDP1ALDH1A1MMP1MMP9MMP13 | |
| SCHEMBL450158 | 0.89 | ALDH1A1 (0.40) | TDP1ABCB1ALDH1A1ABCC1MMP1 | |
| SCHEMBL3191672 | 0.87 | TSHR (0.39) | TDP1ABCB1ALDH1A1TSHRABCC1 | |
| SCHEMBL6652822 | 0.86 | TDP1 (0.49) | TDP1ABCB1PSIP1ALDH1A1TSHR | |
| SCHEMBL17222453 | 0.86 | TDP1 (0.39) | TDP1ABCB1ALDH1A1TSHRABCC1 | |
| SCHEMBL218711 | 0.86 | HTR6 (0.41) | TDP1PSIP1ALDH1A1TSHRMMP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 210 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8053158-B2 | Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-11-08 | — | — | US | claimed |
| US-20070202436-A1 | Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-08-30 | — | — | US | claimed |
| US-11970557-B2 | Polymer containing photoacid generator | LG CHEM, LTD. (KR) | 2024-04-30 | — | — | US | disclosed |
| EP-3010943-B1 | CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM | CANON KK (JP) | 2024-04-03 | — | — | EP | disclosed |
| US-11681227-B2 | Enhanced EUV photoresist materials, formulations and processes | IRRESISTIBLE MATERIALS LTD (GB) | 2023-06-20 | — | — | US | disclosed |
| US-11592605-B2 | Color developing structure having concave-convex layer, method for producing such structure, and display | TOPPAN PRINTING CO., LTD. (JP) | 2023-02-28 | — | — | US | disclosed |
| CN-114975098-A | Nanoimprint liquid material, method for producing pattern of cured product, and method for producing circuit board | 佳能株式会社 | 2022-08-30 | — | — | CN | disclosed |
| CN-107251193-B | Nanoimprint liquid material, method for producing pattern of cured product, method for producing optical component, and method for producing circuit board | 佳能株式会社 | 2022-06-21 | — | — | CN | disclosed |
| US-11332597-B2 | Photo-curable composition and patterning method using the same | CANON KABUSHIKI KAISHA (JP) | 2022-05-17 | — | — | US | disclosed |
| CN-111699206-B | Polymers comprising photoacid generators | 株式会社LG化学 | 2022-05-10 | — | — | CN | disclosed |
| CN-113994256-A | Method for forming EUV patterned resist | 亚历克斯·P·G·罗宾逊 | 2022-01-28 | — | — | CN | disclosed |
| US-6235446-B1 | MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER | JSR CORPORATION (JP) | 2001-05-22 | — | — | US | disclosed |
| US-6136500-A | CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION | JSR CORPORATION (JP) | 2000-10-24 | — | — | US | disclosed |
| EP-1035436-A1 | Resist pattern formation method | JSR Corporation (JP) | 2000-09-13 | — | — | EP | disclosed |
| EP-1011029-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2000-06-21 | — | — | EP | disclosed |
| EP-0704762-B1 | Resist material and pattern formation | WAKO PURE CHEM IND LTD (JP) | 1999-12-15 | — | — | EP | disclosed |
| EP-0898201-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-02-24 | — | — | EP | disclosed |
| US-5558976-A | HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR, PHOTORESISTS | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 1996-09-24 | — | — | US | disclosed |
| US-5558971-A | HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 1996-09-24 | — | — | US | disclosed |
| EP-0704762-A1 | Resist material and pattern formation | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 1996-04-03 | — | — | EP | disclosed |