SCHEMBL454458

SCHEMBL454458

O=S(=O)(O[I+](c1ccccc1)c1ccccc1)c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTR6 P50406 2/20 0.42
TDP1 Q9NUW8 3/20 0.41
PARL Q9H300 1/20 0.41
ALDH1A1 P00352 6/20 0.40
MAPT P10636 3/20 0.40
KDM4E B2RXH2 2/20 0.40
HPGD P15428 1/20 0.40
KMT2A Q03164 1/20 0.40
CA1 P00915 2/20 0.39
CA2 P00918 2/20 0.39
HSD17B10 Q99714 1/20 0.39
CA12 O43570 1/20 0.39
CA3 P07451 1/20 0.39
CA4 P22748 1/20 0.39
CA6 P23280 1/20 0.39
CA5A P35218 1/20 0.39
CA7 P43166 1/20 0.39
PLA2G7 Q13093 1/20 0.39
CA9 Q16790 1/20 0.39
CA13 Q8N1Q1 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5403499 0.87 KMT2A (0.46) ALDH1A1HPGDKMT2AHSD17B10TSHR
SCHEMBL2898544 0.87 TDP1 (0.56) TDP1PARLALDH1A1MAPTKMT2A
SCHEMBL2895875 0.87 VDR (0.42) TDP1ALDH1A1MAPTKDM4EHPGD
SCHEMBL52310 0.87 VDR (0.46) TDP1ALDH1A1KDM4EHPGDKMT2A
SCHEMBL4655792 0.86 HTT (0.45) TDP1ALDH1A1CA4SMN1; SMN2LMNA
SCHEMBL10492049 0.85 VDR (0.45) TDP1ALDH1A1KDM4EHPGDKMT2A
SCHEMBL2634850 0.84 LMNA (0.50) TDP1ALDH1A1CA1CA2CA4
SCHEMBL7733563 0.84 CA1 (0.47) ALDH1A1CA1CA2CA12CA4
SCHEMBL7739940 0.84 CA12 (0.35) TDP1PARLALDH1A1MAPTKDM4E
SCHEMBL4654799 0.83 AGTR1 (0.33) HTR6TDP1PARLALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 334 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122043858-A EUV patterned resist formation method 亚历克斯·P·G·罗宾逊 2026-05-15 CN disclosed
US-20250362597-A1 RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2025-11-27 US disclosed
US-20250321485-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2025-10-16 US disclosed
CN-119422108-A Resist composition and method for forming resist film using same 三菱瓦斯化学株式会社 2025-02-11 CN disclosed
US-20240369925-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-11-07 US disclosed
US-20240369924-A1 RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-11-07 US disclosed
US-11970557-B2 Polymer containing photoacid generator LG CHEM, LTD. (KR) 2024-04-30 US disclosed
EP-3010943-B1 CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM CANON KK (JP) 2024-04-03 EP disclosed
CN-117769684-A Resist auxiliary film composition and pattern forming method using the same 三菱瓦斯化学株式会社 2024-03-26 CN disclosed
CN-117716290-A Resist composition and method for forming resist film using the same 三菱瓦斯化学株式会社 2024-03-15 CN disclosed
US-20020012872-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-31 US disclosed
US-6337171-B1 AS A RESIST APPLICABLE TO FAR ULTRAVIOLET RAYS SUCH AS A KRF EXCIMER LASER, CHARGED PARTICLE RAYS SUCH AS ELECTRON BEAMS, AND X-RAYS JSR CORPORATION (JP) 2002-01-08 US disclosed
EP-1164433-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
US-6280900-B1 RADIATION SENSITIVE COMPOSITION WITH ALKALINE DEVELOPER SOLUBLE IN POLYMER COATED ON SUBSTRATE JSR CORPORATION (JP) 2001-08-28 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
US-6235446-B1 MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER JSR CORPORATION (JP) 2001-05-22 US disclosed
US-6136500-A CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION JSR CORPORATION (JP) 2000-10-24 US disclosed
EP-1011029-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2000-06-21 EP disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed