Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.63 |
| ▸ | MAPT | P10636 | 8/20 | 0.63 |
| ▸ | KDM4E | B2RXH2 | 8/20 | 0.63 |
| ▸ | KMT2A | Q03164 | 7/20 | 0.63 |
| ▸ | HPGD | P15428 | 7/20 | 0.63 |
| ▸ | MEN1 | O00255 | 5/20 | 0.62 |
| ▸ | HTT | P42858 | 2/20 | 0.62 |
| ▸ | POLB | P06746 | 1/20 | 0.55 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.55 |
| ▸ | VDR | P11473 | 2/20 | 0.51 |
| ▸ | PARL | Q9H300 | 2/20 | 0.49 |
| ▸ | LMNA | P02545 | 2/20 | 0.48 |
| ▸ | THRB | P10828 | 1/20 | 0.48 |
| ▸ | F2 | P00734 | 2/20 | 0.47 |
| ▸ | DNMT1 | P26358 | 1/20 | 0.43 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.42 |
| ▸ | RAB9A | P51151 | 1/20 | 0.42 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.39 |
| ▸ | HSP90AB1 | P08238 | 1/20 | 0.39 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL462228 | 0.91 | KMT2A (0.66) | ALDH1A1MAPTKDM4EKMT2AHPGD | |
| SCHEMBL462046 | 0.90 | VDR (0.68) | ALDH1A1MAPTKDM4EKMT2AHPGD | |
| SCHEMBL547930 | 0.86 | KMT2A (0.50) | ALDH1A1MAPTKDM4EKMT2AHPGD | |
| SCHEMBL548394 | 0.85 | ALDH1A1 (0.47) | ALDH1A1MAPTKDM4EKMT2AHPGD | |
| SCHEMBL65319 | 0.83 | MAPT (0.47) | ALDH1A1MAPTKDM4EKMT2AHPGD | |
| SCHEMBL60581 | 0.83 | KMT2A (0.45) | ALDH1A1MAPTKDM4EKMT2AHPGD | |
| SCHEMBL184225 | 0.82 | DNMT1 (0.42) | ALDH1A1MAPTKDM4EKMT2AHPGD | |
| SCHEMBL22251608 | 0.79 | KDM4E (0.75) | ALDH1A1MAPTKDM4EKMT2AHPGD | |
| SCHEMBL461884 | 0.79 | KMT2A (0.40) | ALDH1A1MAPTKDM4EKMT2AHPGD | |
| SCHEMBL64368 | 0.78 | KDM4E (1.00) | ALDH1A1MAPTKDM4EKMT2AHPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 161 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3382453-B1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHINETSU CHEMICAL CO (JP) | 2023-09-20 | — | — | EP | disclosed |
| EP-3266759-B1 | COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2023-09-13 | — | — | EP | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-11143962-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-10-12 | — | — | US | disclosed |
| US-11137686-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-10-05 | — | — | US | disclosed |
| EP-3118183-B1 | COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-07-21 | — | — | EP | disclosed |
| EP-3179308-B1 | UNDERLAYER FILM-FORMING COMPOSITION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMING METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-04-21 | — | — | EP | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-20030113660-A1 | Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |
| US-20020192593-A1 | Used as chemically amplified resist, exhibits high sensitivity, resolution, radiation transmittance, and surface smoothness, and is free from the problem of partial insolublization during overexposure | JSR CORPORATION (JP) | 2002-12-19 | — | — | US | disclosed |
| US-20020172885-A1 | Novel carbazole derivative and chemically amplified radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-11-21 | — | — | US | disclosed |
| EP-1253470-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-10-30 | — | — | EP | disclosed |
| EP-1238972-A1 | Novel carbazole derivative and chemically amplified radiation-sensitive resin composition | JSR Corporation (JP) | 2002-09-11 | — | — | EP | disclosed |
| EP-1231205-A1 | VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2002-08-14 | — | — | EP | disclosed |
| EP-0058638-B1 | CURABLE COMPOSITIONS CONTAINING AN ACID-CURABLE RESIN, AND PROCESS FOR CURING THEM | CIBA-GEIGY AG (CH) | 1985-08-28 | — | — | EP | disclosed |
| EP-0058638-A2 | Curable compositions containing an acid-curable resin, and process for curing them | CIBA-GEIGY AG (CH) | 1982-08-25 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | ALDH1A1 1553/4885MAPT 4014/4885KDM4E 1265/4885 |
| US-20020172885-A1 | Novel carbazole derivative and chemically amplified radiation-sensitive resin composition | ARID2, RAD1, RAD51 | ALDH1A1 1654/4885MAPT 3939/4885KDM4E 3279/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | ALDH1A1 1540/4885MAPT 3986/4885KDM4E 821/4885 |
| US-11137686-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method | MLLT1, PRDM9, NAP1L1 | ALDH1A1 2264/4885MAPT 4115/4885KDM4E 203/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | ALDH1A1 1540/4885MAPT 3986/4885KDM4E 821/4885 |
| US-11143962-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method | MLLT1, MLLT3, KDM2B | ALDH1A1 1308/4885MAPT 4206/4885KDM4E 90/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | ALDH1A1 135/4885MAPT 4171/4885KDM4E 1875/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.