SCHEMBL60581

SCHEMBL60581

O=C1c2ccc3ccccc3c2C(=O)N1OS(=O)(=O)c1c(F)c(F)c(F)c(F)c1F

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 8/20 0.45
MEN1 O00255 5/20 0.45
MAPT P10636 10/20 0.42
KDM4E B2RXH2 10/20 0.42
ALDH1A1 P00352 10/20 0.42
HPGD P15428 7/20 0.42
HTT P42858 3/20 0.42
XBP1 P17861 2/20 0.42
CYP1A2 P05177 1/20 0.42
CYP3A4 P08684 1/20 0.42
CYP2C19 P33261 1/20 0.42
NPSR1 Q6W5P4 1/20 0.42
DNMT1 P26358 1/20 0.40
SMN1; SMN2 Q16637 2/20 0.39
RAB9A P51151 1/20 0.39
VDR P11473 2/20 0.39
POLB P06746 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
LMNA P02545 2/20 0.37
THRB P10828 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL462228 0.85 KMT2A (0.66) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL72297 0.83 ALDH1A1 (0.63) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL548394 0.82 ALDH1A1 (0.47) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL2898286 0.80 KMT2A (0.66) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL65319 0.80 MAPT (0.47) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL184225 0.79 DNMT1 (0.42) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL462046 0.79 VDR (0.68) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL547930 0.78 KMT2A (0.50) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL461884 0.78 KMT2A (0.40) KMT2AMEN1MAPTKDM4EALDH1A1
SCHEMBL7782937 0.77 DNMT1 (0.43) KMT2AMEN1MAPTKDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 441 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240077802-A1 METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-03-07 US claimed
US-11626293-B2 Method of manufacturing a semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-04-11 US claimed
US-20220230889-A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2022-07-21 US claimed
US-8557943-B2 Nanostructured organosilicates from thermally curable block copolymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-10-15 US claimed
US-8426113-B2 Chemically amplified silsesquioxane resist compositions INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-04-23 US claimed
WO-2012148659-A2 NANOSTRUCTURED ORGANOSILICATES FROM THERMALLY CURABLE BLOCK COPOLYMERS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-11-01 WO claimed
US-20120277339-A1 Nanostructured Organosilicates from Thermally Curable Block Copolymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-11-01 US claimed
US-8262961-B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-11 US claimed
US-8128832-B2 Processes and materials for step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-03-06 US claimed
US-20120040289-A1 CHEMICALLY AMPLIFIED SILSESQUIOXANE RESIST COMPOSITIONS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-02-16 US claimed
US-20080174051-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2008-07-24 US claimed
US-20080169268-A1 PROCESSES AND MATERIALS FOR STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2008-07-17 US claimed
US-7358029-B2 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US claimed
US-20070298176-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2007-12-27 US claimed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US claimed
US-20070051697-A1 Processes and materials for step and flash imprint lithography GLOBALFOUNDRIES INC. (KY) 2007-03-08 US claimed
US-6365321-B1 COPOLYMER WITH ACRYLATE HAVING ACID LABILE GROUP, HOMOGENOUSLY BLENDED WITH PHENOLIC POLYMER WHICH IS PARTIALLY OR WHOLLY PROTECTED INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-04-02 US claimed
EP-0605089-B1 Photoresist composition IBM (US) 1999-01-07 EP claimed
US-5492793-A Photoresist composition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1996-02-20 US claimed
EP-0605089-A2 Photoresist composition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-07-06 EP claimed