SCHEMBL472268

SCHEMBL472268

CN(C)c1ccc(Br)cc1C(=O)O

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.56
KDM4E B2RXH2 1/20 0.53
GLA P06280 1/20 0.53
MYC P01106 1/20 0.49
NR4A1 P22736 1/20 0.49
GRIN1 Q05586 1/20 0.44
GRIN2A Q12879 1/20 0.44
GRIN2B Q13224 1/20 0.44
GRIN2C Q14957 1/20 0.44
GPR35 Q9HC97 1/20 0.44
APEX1 P27695 1/20 0.42
CES2 O00748 1/20 0.42
GALR3 O60755 1/20 0.42
TP53 P04637 1/20 0.42
GAA P10253 1/20 0.42
MAPT P10636 1/20 0.42
TSHR P16473 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
CYP1A2 P05177 1/20 0.42
CYP2C9 P11712 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16011492 0.85 ALDH1A1 (0.47) ALDH1A1KDM4EGLAMYCNR4A1
SCHEMBL3196612 0.85 KDM4E (0.48) ALDH1A1KDM4EGLAMYCNR4A1
SCHEMBL4302570 0.80 NR4A2 (0.49) ALDH1A1GAAMAPTTSHRSMN1; SMN2
SCHEMBL19689021 0.78 ALDH1A1 (0.57) ALDH1A1KDM4EGLATP53GAA
SCHEMBL472317 0.78 ALDH1A1 (0.57) ALDH1A1KDM4EGLAMYCAPEX1
SCHEMBL8646661 0.78 HCAR3 (0.57) ALDH1A1KDM4EGLAMYCTP53
SCHEMBL14052325 0.78 USP2 (0.55) ALDH1A1TP53GAAMAPTTSHR
SCHEMBL472286 0.77 ALDH1A1 (0.56) ALDH1A1KDM4EGLATP53GAA
SCHEMBL472322 0.77 ALDH1A1 (0.57) ALDH1A1KDM4EMYCNR4A1TP53
SCHEMBL21449420 0.77 ALDH1A1 (0.40) ALDH1A1KDM4EGLACES2GALR3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 132 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2492746-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2019-11-20 EP disclosed
EP-2492747-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2018-11-07 EP disclosed
EP-2270596-B1 Positive resist compostion and pattern forming process SHINETSU CHEMICAL CO (JP) 2018-07-25 EP disclosed
CN-104330955-B For the chemical-amplification positive anti-corrosion agent composition and patterning method of EB or EUV lithographic printings 信越化学工业株式会社 2018-05-25 CN disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
CN-104199255-B Chemistry amplification negative resist composition and patterning method for EB or EUV lithographic printings 信越化学工业株式会社 2018-03-13 CN disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
EP-2360527-B1 Patterning process using EB or EUV lithography SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360525-B1 Chemically amplified positive resist composition and pattern forming process SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360526-B1 Chemically amplified negative resist composition for E beam or EUV lithography and patterning process SHINETSU CHEMICAL CO (JP) 2017-08-16 EP disclosed
EP-2244124-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244125-A2 Resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
US-20100167207-A1 Chemically amplified positive resist composition and resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-01 US disclosed
EP-2202577-A1 Chemically amplified positive resist composition and resist patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-30 EP disclosed
CN-101762981-A Chemically amplified positive resist composition and resist patterning process SHINETSU CHEMICAL CO 2010-06-30 CN disclosed
EP-2146245-A2 Resist composition and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-01-20 EP disclosed
US-20100009299-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-14 US disclosed
CN-101625524-A Photoresist composition and pattern forming method SHINETSU CHEMICAL CO 2010-01-13 CN disclosed
EP-0023569-B1 DERIVATIVES OF CARBOXYLIC ACIDS, THEIR PREPARATION AND MEDICAMENTS CONTAINING THEM Dr. Karl Thomae GmbH (DE) 1983-06-22 EP disclosed
EP-0023569-A1 Derivatives of carboxylic acids, their preparation and medicaments containing them Dr. Karl Thomae GmbH (DE) 1981-02-11 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100009299-A1 Resist composition and patterning process ARF4, FGFR2, ARF5 ALDH1A1 2706/4885KDM4E 99/4885GLA 3971/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.