SCHEMBL472286

SCHEMBL472286

CN(C)c1ccc(I)cc1C(=O)O

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.56
PTPRC P08575 1/20 0.46
PTPN2 P17706 1/20 0.46
PTPN1 P18031 1/20 0.46
PTPRA P18433 1/20 0.46
PTPRB P23467 1/20 0.46
PTPRE P23469 1/20 0.46
PTPN6 P29350 1/20 0.46
GAA P10253 3/20 0.42
MAPT P10636 2/20 0.42
TP53 P04637 2/20 0.42
TSHR P16473 2/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
HCAR3 P49019 1/20 0.40
KDM4E B2RXH2 2/20 0.39
GLA P06280 1/20 0.39
TPMT P51580 1/20 0.39
MAPK1 P28482 1/20 0.38
HTT P42858 1/20 0.37
KCNB1 Q14721 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30005614 0.81 KMT2A (0.45) ALDH1A1PTPRCPTPN2PTPN1PTPRA
SCHEMBL472317 0.78 ALDH1A1 (0.57) ALDH1A1PTPN1GAAMAPTTP53
SCHEMBL19689021 0.78 ALDH1A1 (0.57) ALDH1A1GAAMAPTTP53TSHR
SCHEMBL8646661 0.78 HCAR3 (0.57) ALDH1A1PTPN1GAAMAPTTP53
SCHEMBL472322 0.77 ALDH1A1 (0.57) ALDH1A1GAAMAPTTP53TSHR
SCHEMBL11170036 0.77 ALDH1A1 (0.56) ALDH1A1GAAMAPTTP53TSHR
SCHEMBL30989218 0.77 ALDH1A1 (0.56) ALDH1A1PTPN1GAAMAPTTP53
SCHEMBL3883820 0.77 ALDH1A1 (0.56) ALDH1A1PTPN1GAAMAPTTP53
SCHEMBL472268 0.77 ALDH1A1 (0.56) ALDH1A1GAAMAPTTP53TSHR
SCHEMBL522679 0.74 PTPN1 (0.55) ALDH1A1PTPRCPTPN2PTPN1PTPRA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 146 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2492746-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2019-11-20 EP disclosed
CN-105607426-B Polymer, chemical amplification negative resist composition and pattern forming method SHIN ETSU CHEMICAL COMPANY (JP) 2019-11-01 CN disclosed
EP-2492747-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2018-11-07 EP disclosed
EP-2270596-B1 Positive resist compostion and pattern forming process SHINETSU CHEMICAL CO (JP) 2018-07-25 EP disclosed
CN-104330955-B For the chemical-amplification positive anti-corrosion agent composition and patterning method of EB or EUV lithographic printings 信越化学工业株式会社 2018-05-25 CN disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
CN-104199255-B Chemistry amplification negative resist composition and patterning method for EB or EUV lithographic printings 信越化学工业株式会社 2018-03-13 CN disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
EP-2360527-B1 Patterning process using EB or EUV lithography SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360525-B1 Chemically amplified positive resist composition and pattern forming process SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
US-20100291484-A1 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-18 US disclosed
EP-2244124-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244125-A2 Resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244126-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
US-20100167207-A1 Chemically amplified positive resist composition and resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-01 US disclosed
EP-2202577-A1 Chemically amplified positive resist composition and resist patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-30 EP disclosed
CN-101762981-A Chemically amplified positive resist composition and resist patterning process SHINETSU CHEMICAL CO 2010-06-30 CN disclosed
EP-2146245-A2 Resist composition and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-01-20 EP disclosed
US-20100009299-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-14 US disclosed
CN-101625524-A Photoresist composition and pattern forming method SHINETSU CHEMICAL CO 2010-01-13 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100009299-A1 Resist composition and patterning process ARF4, FGFR2, ARF5 ALDH1A1 2706/4885PTPRC 4001/4885PTPN2 2902/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.