Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.50 |
| ▸ | TP53 | P04637 | 1/20 | 0.50 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.47 |
| ▸ | MEN1 | O00255 | 1/20 | 0.47 |
| ▸ | NPC1 | O15118 | 1/20 | 0.47 |
| ▸ | POLB | P06746 | 1/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.46 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.46 |
| ▸ | SRD5A2 | P31213 | 3/20 | 0.44 |
| ▸ | CA1 | P00915 | 3/20 | 0.43 |
| ▸ | CA2 | P00918 | 3/20 | 0.43 |
| ▸ | CA12 | O43570 | 1/20 | 0.43 |
| ▸ | CA3 | P07451 | 1/20 | 0.43 |
| ▸ | TYR | P14679 | 1/20 | 0.43 |
| ▸ | DRD1 | P21728 | 1/20 | 0.43 |
| ▸ | CA4 | P22748 | 1/20 | 0.43 |
| ▸ | CA6 | P23280 | 1/20 | 0.43 |
| ▸ | CA5A | P35218 | 1/20 | 0.43 |
| ▸ | CA7 | P43166 | 1/20 | 0.43 |
| ▸ | CA9 | Q16790 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL925065 | 0.85 | TSHR (0.52) | TSHRTP53KMT2AMEN1NPC1 | |
| Terephthalic Acid SCHEMBL11409307 | 0.80 | TSHR (0.57) | TSHRTP53KMT2APOLBALDH1A1 | |
| Terephthalic Acid SCHEMBL27732688 | 0.80 | TSHR (0.57) | TSHRTP53KMT2AMEN1NPC1 | |
| Terephthalic Acid SCHEMBL28509987 | 0.79 | TSHR (0.71) | TSHRTP53KMT2AALDH1A1SMN1; SMN2 | |
| Terephthalic Acid SCHEMBL338413 | 0.79 | TSHR (0.71) | TSHRTP53KMT2AALDH1A1SMN1; SMN2 | |
| Terephthalic Acid SCHEMBL4243136 | 0.79 | TSHR (0.71) | TSHRTP53KMT2AALDH1A1SMN1; SMN2 | |
| SCHEMBL3619964 | 0.79 | ALDH1A1 (0.47) | TSHRTP53KMT2AMEN1NPC1 | |
| SCHEMBL13315767 | 0.78 | KMT2A (0.51) | TSHRKMT2AMEN1NPC1POLB | |
| Terephthalic Acid SCHEMBL27832014 | 0.77 | TSHR (0.67) | TSHRTP53KMT2AALDH1A1SMN1; SMN2 | |
| Terephthalic Acid SCHEMBL23071346 | 0.77 | TSHR (0.75) | TSHRTP53KMT2AALDH1A1SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 108 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2492746-B1 | Chemically amplified negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2019-11-20 | — | — | EP | disclosed |
| EP-2492747-B1 | Chemically amplified negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2018-11-07 | — | — | EP | disclosed |
| EP-2270596-B1 | Positive resist compostion and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2018-07-25 | — | — | EP | disclosed |
| US-RE46765-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-RE46736-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| EP-2360525-B1 | Chemically amplified positive resist composition and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2360527-B1 | Patterning process using EB or EUV lithography | SHINETSU CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2360526-B1 | Chemically amplified negative resist composition for E beam or EUV lithography and patterning process | SHINETSU CHEMICAL CO (JP) | 2017-08-16 | — | — | EP | disclosed |
| EP-2256552-B1 | Negative resist composition and patterning process using the same | SHINETSU CHEMICAL CO (JP) | 2017-07-12 | — | — | EP | disclosed |
| US-9604921-B2 | Sulfonium salt, resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-03-28 | — | — | US | disclosed |
| EP-2256551-A1 | Chemically amplified resist compositon and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-12-01 | — | — | EP | disclosed |
| EP-2253996-A1 | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-11-24 | — | — | EP | disclosed |
| US-20100291484-A1 | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-18 | — | — | US | disclosed |
| EP-2244124-A2 | Patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-10-27 | — | — | EP | disclosed |
| EP-2244125-A2 | Resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-10-27 | — | — | EP | disclosed |
| EP-2244126-A2 | Patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-10-27 | — | — | EP | disclosed |
| US-20100167207-A1 | Chemically amplified positive resist composition and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-01 | — | — | US | disclosed |
| EP-2202577-A1 | Chemically amplified positive resist composition and resist patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-30 | — | — | EP | disclosed |
| EP-2146245-A2 | Resist composition and patterning process | Shinetsu Chemical Co., Ltd. (JP) | 2010-01-20 | — | — | EP | disclosed |
| US-20100009299-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100009299-A1 | Resist composition and patterning process | ARF4, FGFR2, ARF5 | TSHR 2319/4885TP53 3130/4885KMT2A 81/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.