Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.52 |
| ▸ | TP53 | P04637 | 1/20 | 0.52 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.48 |
| ▸ | MEN1 | O00255 | 2/20 | 0.48 |
| ▸ | NPC1 | O15118 | 1/20 | 0.48 |
| ▸ | POLB | P06746 | 1/20 | 0.48 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.48 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.48 |
| ▸ | TAS2R14 | Q9NYV8 | 1/20 | 0.47 |
| ▸ | SRD5A2 | P31213 | 3/20 | 0.46 |
| ▸ | CA2 | P00918 | 4/20 | 0.44 |
| ▸ | CA1 | P00915 | 3/20 | 0.44 |
| ▸ | CA12 | O43570 | 2/20 | 0.44 |
| ▸ | CA9 | Q16790 | 2/20 | 0.44 |
| ▸ | RAB9A | P51151 | 1/20 | 0.44 |
| ▸ | SLC22A6 | Q4U2R8 | 1/20 | 0.44 |
| ▸ | SLC22A8 | Q8TCC7 | 1/20 | 0.44 |
| ▸ | ABCC2 | Q92887 | 1/20 | 0.44 |
| ▸ | SLC22A12 | Q96S37 | 1/20 | 0.44 |
| ▸ | UGT1A7 | Q9HAW7 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL472284 | 0.85 | TSHR (0.50) | TSHRTP53KMT2AMEN1NPC1 | |
| SCHEMBL2497217 | 0.84 | HPGD (0.58) | NPC1ALDH1A1SMN1; SMN2SRD5A2RAB9A | |
| SCHEMBL1128718 | 0.81 | PARP10 (0.50) | TSHRKMT2APOLBALDH1A1CA2 | |
| SCHEMBL3135878 | 0.81 | KMT2A (0.52) | TSHRTP53KMT2AMEN1NPC1 | |
| Terephthalic Acid SCHEMBL23071346 | 0.78 | TSHR (0.75) | TSHRTP53KMT2AALDH1A1SMN1; SMN2 | |
| Terephthalic Acid SCHEMBL28393368 | 0.78 | TSHR (0.75) | TSHRTP53KMT2AALDH1A1SMN1; SMN2 | |
| Terephthalic Acid SCHEMBL23069370 | 0.78 | TSHR (0.75) | TSHRTP53KMT2AALDH1A1SMN1; SMN2 | |
| Bicarbonate SCHEMBL6665758 | 0.77 | ALDH1A1 (0.43) | TSHRTP53NPC1ALDH1A1SMN1; SMN2 | |
| SCHEMBL3619964 | 0.76 | ALDH1A1 (0.47) | TSHRTP53KMT2AMEN1NPC1 | |
| SCHEMBL1006322 | 0.76 | GSK3B (0.55) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240012326-A1 | PHOTOSENSITIVE ELEMENT, AND METHOD FOR FORMING RESIST PATTERN | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2024-01-11 | — | — | US | disclosed |
| CN-116830038-A | Photosensitive element and method for forming resist pattern | 旭化成株式会社 | 2023-09-29 | — | — | CN | disclosed |
| CN-115398337-A | Photosensitive element and method for forming resist pattern | 旭化成株式会社 | 2022-11-25 | — | — | CN | disclosed |
| WO-2022163652-A1 | PHOTOSENSITIVE ELEMENT, AND METHOD FOR FORMING RESIST PATTERN | 旭化成株式会社 | 2022-08-04 | — | — | WO | disclosed |
| EP-2270596-B1 | Positive resist compostion and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2018-07-25 | — | — | EP | disclosed |
| EP-2256552-B1 | Negative resist composition and patterning process using the same | SHINETSU CHEMICAL CO (JP) | 2017-07-12 | — | — | EP | disclosed |
| US-9604921-B2 | Sulfonium salt, resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-03-28 | — | — | US | disclosed |
| US-9436083-B2 | Chemically-amplified negative resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329476-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160090355-A1 | SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-31 | — | — | US | disclosed |
| US-20110129765-A1 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-02 | — | — | US | disclosed |
| US-20110003251-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-06 | — | — | US | disclosed |
| EP-2270596-A2 | Positive resist compostion and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2011-01-05 | — | — | EP | disclosed |
| US-20100304301-A1 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| EP-2256552-A1 | Negative resist composition and patterning process using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-12-01 | — | — | EP | disclosed |
| EP-2253996-A1 | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-11-24 | — | — | EP | disclosed |
| US-20100291484-A1 | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-18 | — | — | US | disclosed |
| US-20100167207-A1 | Chemically amplified positive resist composition and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-01 | — | — | US | disclosed |
| EP-2202577-A1 | Chemically amplified positive resist composition and resist patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-30 | — | — | EP | disclosed |
| US-4035372-A | VASODILATORS | G. D. SEARLE & CO. (US) | 1977-07-12 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160090355-A1 | SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | ETV6, ETV1, EIF2B3 | TSHR 3093/4885TP53 4152/4885KMT2A 959/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.