Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.41 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.37 |
| ▸ | TSHR | P16473 | 3/20 | 0.33 |
| ▸ | THRB | P10828 | 1/20 | 0.31 |
| ▸ | ELANE | P08246 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL74808 | 0.98 | ALDH1A1 (0.39) | ALDH1A1CYP19A1TSHRTHRB | |
| SCHEMBL685580 | 0.98 | ALDH1A1 (0.39) | ALDH1A1CYP19A1TSHRTHRB | |
| SCHEMBL28137014 | 0.98 | ALDH1A1 (0.39) | ALDH1A1CYP19A1TSHRTHRB | |
| SCHEMBL685576 | 0.98 | ALDH1A1 (0.39) | ALDH1A1CYP19A1TSHRTHRB | |
| SCHEMBL1832545 | 0.98 | ALDH1A1 (0.39) | ALDH1A1CYP19A1TSHRTHRB | |
| SCHEMBL6912158 | 0.98 | ALDH1A1 (0.39) | ALDH1A1CYP19A1TSHRTHRB | |
| SCHEMBL673273 | 0.96 | ALDH1A1 (0.41) | ALDH1A1CYP19A1TSHRTHRBELANE | |
| Methacrylic Acid SCHEMBL20573813 | 0.92 | CYP19A1 (0.36) | ALDH1A1CYP19A1ELANE | |
| SCHEMBL13900356 | 0.91 | ALDH1A1 (0.44) | ALDH1A1TSHRTHRBELANE | |
| SCHEMBL27945670 | 0.91 | ALDH1A1 (0.44) | ALDH1A1TSHRTHRBELANE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1687 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119613607-A | Preparation method of 193nm photoresist resin | 江苏集萃光敏电子材料研究所有限公司 | 2025-03-14 | — | — | CN | claimed |
| CN-119285842-A | Fluorine-containing polymer, preparation method thereof and ArF immersed photoresist prepared from fluorine-containing polymer | 瑞红(苏州)电子化学品股份有限公司 | 2025-01-10 | — | — | CN | claimed |
| CN-119148465-A | Photosensitive resin composition, photosensitive dry film and application thereof | 杭州福斯特电子材料有限公司 | 2024-12-17 | — | — | CN | claimed |
| CN-118853024-A | High-nickel ternary positive electrode binder and preparation method and application thereof | 深圳大学 | 2024-10-29 | — | — | CN | claimed |
| CN-114637165-B | Composition for photoresist top layer coating and polymer preparation method thereof | 中节能万润股份有限公司 | 2024-09-17 | — | — | CN | claimed |
| CN-118625599-A | Photosensitive resin composition, photosensitive dry film and preparation method thereof | 杭州福斯特电子材料有限公司 | 2024-09-10 | — | — | CN | claimed |
| CN-115536776-A | Resin for photoresist, preparation method thereof and photoresist prepared from resin | 瑞红(苏州)电子化学品股份有限公司 | 2022-12-30 | — | — | CN | claimed |
| CN-115260030-A | Process preparation method and production device of methacrylate photoresist monomer | 濮阳惠成电子材料股份有限公司 | 2022-11-01 | — | — | CN | claimed |
| CN-114637165-A | Composition for top coating of photoresist and preparation method of polymer of composition | 中节能万润股份有限公司 | 2022-06-17 | — | — | CN | claimed |
| CN-102472971-B | chemically amplified photoresist composition and method of use thereof | 国际商业机器公司 | 2016-12-07 | — | — | CN | claimed |
| CN-122071553-A | Preparation method of negative development photoresist resin | 万华化学集团股份有限公司 | 2026-05-22 | — | — | CN | disclosed |
| WO-2026101739-A1 | CYCLIC SULFONATE COMPOUNDS AS PHOTOACID GENERATORS IN RESIST APPLICATIONS | HERAEUS EPURIO LLC (US) | 2026-05-15 | — | — | WO | disclosed |
| US-12625429-B2 | Resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-05-12 | — | — | US | disclosed |
| US-12607933-B2 | Polymer compositions having photoacid generators and photoresists | DUPONT ELECTRONICS, INC. (US) | 2026-04-21 | — | — | US | disclosed |
| US-12596303-B2 | Resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-07 | — | — | US | disclosed |
| US-20050171226-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2005-08-04 | — | — | US | disclosed |
| US-6379861-B1 | POLY(METH)ACRYLATE ESTER WITH TERTIARY OR QUATERNARY CARBON AND PHOTOACTIVE COMPOUND; HIGH RESOLUTION RELIEF IMAGES; CHEMICALLY-AMPLIFIED POSITIVES | SHIPLEY COMPANY, L.L.C. | 2002-04-30 | — | — | US | disclosed |
| US-6136501-A | PHOTORESIST COMPOSITION COMPRISING PHOTOACTIVE COMPONENT AND POLYMER THAT COMPRISES ESTER GROUPS | SHIPLEY COMPANY, L.L.C. (US) | 2000-10-24 | — | — | US | disclosed |
| US-6010826-A | Resist composition | NIPPON ZEON CO., LTD. (JP) | 2000-01-04 | — | — | US | disclosed |
| EP-0786701-A1 | RESIST COMPOSITION | NIPPON ZEON CO., LTD. (JP) | 1997-07-30 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12625429-B2 | Resist composition and pattern forming process | NAF1, CLIC1, H1-4 | ALDH1A1 1604/4885CYP19A1 4182/4885TSHR 455/4885 |
| US-12596303-B2 | Resist composition and pattern forming process | CBR1, CCR1, NAF1 | ALDH1A1 2963/4885CYP19A1 4355/4885TSHR 211/4885 |
| US-12607933-B2 | Polymer compositions having photoacid generators and photoresists | PFAS, AFF1, HBG1 | ALDH1A1 384/4885CYP19A1 1674/4885TSHR 1184/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.