SCHEMBL4741912

SCHEMBL4741912

[CH2]CC(=O)OC1(CC)C2CC3CC(C2)CC1C3

nearest known ligand 0.38

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 1/20 0.33
CYP19A1 P11511 1/20 0.33
HSD11B1 P28845 3/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4742701 0.88 CYP17A1 (0.34) CYP17A1CYP19A1HSD11B1
SCHEMBL172815 0.85 CYP17A1 (0.35) CYP17A1CYP19A1HSD11B1
SCHEMBL12936734 0.82 ALDH1A1 (0.39) CYP17A1CYP19A1HSD11B1
SCHEMBL210241 0.82 CYP17A1 (0.33) CYP17A1CYP19A1HSD11B1
SCHEMBL2672518 0.82 TRPA1 (0.36) CYP17A1CYP19A1HSD11B1
SCHEMBL132417 0.81 ALDH1A1 (0.34) CYP17A1CYP19A1HSD11B1
SCHEMBL2603148 0.81 HSD11B1 (0.33) CYP17A1CYP19A1HSD11B1
SCHEMBL4742225 0.80 CYP19A1 (0.49) CYP17A1CYP19A1HSD11B1
SCHEMBL439938 0.79 HSD11B1 (0.34) CYP17A1CYP19A1HSD11B1
SCHEMBL25509620 0.79 HSD11B1 (0.38) CYP17A1CYP19A1HSD11B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1558654-A4 NOVEL COPOLYMER, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEM THEREOF FUJIFILM ELECTRONIC MATERIALS (US) 2006-04-05 EP claimed
EP-1558654-A2 NOVEL COPOLYMER, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEM THEREOF Fujifilm Electronic Materials USA, Inc. (US) 2005-08-03 EP claimed
US-6916543-B2 Copolymer, photoresist compositions thereof and deep UV bilayer system thereof ARCH SPECIALTY CHEMICALS, INC. (US) 2005-07-12 US claimed
US-20040137362-A1 Novel copolymer, photoresist compositions thereof and deep UV bilayer system thereof ARCH SPECIALTY CHEMICALS, INC. 2004-07-15 US claimed
WO-2004040371-A2 NOVEL COPOLYMER AND PHOTORESIST COMPOSITIONS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2004-05-13 WO claimed
US-8956807-B2 Method for forming resist pattern, and composition for forming resist underlayer film JSR CORPORATION (JP) 2015-02-17 US disclosed
US-20130101942-A1 METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2013-04-25 US disclosed
US-20080199805-A1 PHOTOSENSITIVE COMPOSITIONS EMPLOYING SILICON-CONTAINING ADDITIVES FUJIFILM ELECTRONIC MATERIALS. U.S.A., INC. 2008-08-21 US disclosed
WO-2008098189-A1 PHOTOSENSITIVE COMPOSITIONS EMPLOYING SILICON-CONTAINING ADDITIVES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2008-08-14 WO disclosed
EP-1558654-A4 NOVEL COPOLYMER, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEM THEREOF FUJIFILM ELECTRONIC MATERIALS (US) 2006-04-05 EP disclosed
EP-1558654-A2 NOVEL COPOLYMER, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEM THEREOF Fujifilm Electronic Materials USA, Inc. (US) 2005-08-03 EP disclosed
US-6916543-B2 Copolymer, photoresist compositions thereof and deep UV bilayer system thereof ARCH SPECIALTY CHEMICALS, INC. (US) 2005-07-12 US disclosed
US-20040137362-A1 Novel copolymer, photoresist compositions thereof and deep UV bilayer system thereof ARCH SPECIALTY CHEMICALS, INC. 2004-07-15 US disclosed
WO-2004040371-A2 NOVEL COPOLYMER AND PHOTORESIST COMPOSITIONS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2004-05-13 WO disclosed