Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX2 | P34913 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | HMGCR | P04035 | 1/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL98166 | 0.82 | SLC6A1 (0.32) | — | |
| SCHEMBL2735488 | 0.75 | HMGCR (0.32) | HMGCR | |
| SCHEMBL132916 | 0.74 | HMGCR (0.30) | HMGCR | |
| SCHEMBL12378938 | 0.74 | CYP1A2 (0.32) | — | |
| SCHEMBL47399 | 0.74 | — | — | |
| SCHEMBL19418037 | 0.73 | L3MBTL1 (0.31) | L3MBTL1 | |
| SCHEMBL25701413 | 0.72 | GPR84 (0.33) | — | |
| SCHEMBL15473007 | 0.72 | CYP1A2 (0.40) | HMGCRALDH1A1 | |
| SCHEMBL6367203 | 0.71 | SLC6A1 (0.30) | — | |
| SCHEMBL120308 | 0.71 | HMGCR (0.30) | HMGCR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9523913-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-20 | — | — | US | disclosed |
| US-9250531-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-02-02 | — | — | US | disclosed |
| US-9244347-B2 | Resist composition, compound, polymeric compound and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-9235123-B2 | Resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9134617-B2 | Solvent developable negative resist composition, resist pattern formation method, and method for forming pattern of layer including block copolymer | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-09-15 | — | — | US | disclosed |
| US-9069246-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method and resist film using the composition, and electronic device manufacturing method and electronic device using these | FUJIFILM CORPORATION (JP) | 2015-06-30 | — | — | US | disclosed |
| US-9023581-B2 | Resist composition, method of forming resist pattern, polymeric compound, and compound | TOKYO OHKA KOGYO CO., LTD (JP) | 2015-05-05 | — | — | US | disclosed |
| US-8911928-B2 | Resist composition, method of forming resist pattern, polymeric compound and method of producing the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-16 | — | — | US | disclosed |
| US-20140356787-A1 | RESIST COMPOSITION, COMPOUND, POLYMERIC COMPOUND AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-04 | — | — | US | disclosed |
| US-8012665-B2 | Positive photosensitive composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2011-09-06 | — | — | US | disclosed |
| US-20110117491-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-7914965-B2 | Resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2011-03-29 | — | — | US | disclosed |
| US-7811740-B2 | comprising acrylate resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, and a surfactant containing a fluorine compound or fluorine containing polyethers; resist pattern with good sensitivity, resolution, adhesion, and little in development defects; for an immersion exposure | FUJIFILM CORPORATION (JP) | 2010-10-12 | — | — | US | disclosed |
| US-7790351-B2 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2010-09-07 | — | — | US | disclosed |
| US-20100136479-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100040971-A1 | PATTERN FORMING METHOD, AND RESIST COMPOSITION, DEVELOPER AND RINSING SOLUTION USED IN THE PATTERN FORMING METHOD | FUJIFILM Corporaion (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20090136870-A1 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2009-05-28 | — | — | US | disclosed |
| US-20090023096-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20070072118-A1 | Positive photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100136479-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | AFF1, F12, AFF2 | EPHX2 1401/4885L3MBTL1 4280/4885HMGCR 4708/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.