SCHEMBL47573

SCHEMBL47573

CC1(OC(=O)COc2ccc([S+](c3ccccc3)c3ccccc3)cc2)C2CC3CC(C2)CC1C3

nearest known ligand 0.46

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 2/20 0.46
CYP19A1 P11511 2/20 0.46
HSD11B1 P28845 4/20 0.37
MAPT P10636 1/20 0.37
MAPK1 P28482 2/20 0.36
LMNA P02545 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
ALDH1A1 P00352 1/20 0.36
EPHX2 P34913 1/20 0.36
RAB9A P51151 2/20 0.36
MEN1 O00255 1/20 0.36
KMT2A Q03164 1/20 0.36
NPC1 O15118 1/20 0.35
HIF1A Q16665 1/20 0.35
EPAS1 Q99814 1/20 0.35
ALOX5AP P20292 1/20 0.35
ALOX15 P16050 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13418067 0.92 CYP17A1 (0.45) CYP17A1CYP19A1HSD11B1MAPTMAPK1
SCHEMBL12997509 0.89 RAB9A (0.38) CYP17A1CYP19A1HSD11B1MAPTMAPK1
SCHEMBL13418069 0.89 CYP17A1 (0.52) CYP17A1CYP19A1HSD11B1MAPTMAPK1
SCHEMBL9889028 0.89 CYP17A1 (0.42) CYP17A1CYP19A1HSD11B1MAPTLMNA
SCHEMBL13131018 0.87 EPHX2 (0.38) HSD11B1MAPTMAPK1LMNAL3MBTL1
SCHEMBL12997505 0.87 EPHX2 (0.38) HSD11B1MAPTMAPK1LMNAL3MBTL1
SCHEMBL12997500 0.87 CYP17A1 (0.46) CYP17A1CYP19A1HSD11B1MAPTLMNA
SCHEMBL98530 0.86 CYP17A1 (0.41) CYP17A1CYP19A1MAPTLMNAL3MBTL1
SCHEMBL26791565 0.86 CYP17A1 (0.39) CYP17A1CYP19A1HSD11B1MAPTMAPK1
SCHEMBL12997506 0.85 MAPT (0.40) HSD11B1MAPTMAPK1LMNAL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 619 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-20090162788-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-25 US disclosed
US-20090162788-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-25 US disclosed
US-20090162787-A1 NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-25 US disclosed
EP-2073060-A1 Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-24 EP disclosed
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed
EP-2060600-A1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-20 EP disclosed
US-20090068591-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed
US-20090068591-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 CYP17A1 1181/4885CYP19A1 441/4885HSD11B1 1796/4885
US-20090162787-A1 NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RER1, ASIC1, ABCC1 CYP17A1 439/4885CYP19A1 115/4885HSD11B1 1775/4885
US-20090068591-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR RER1, C1R, ABCC1 CYP17A1 120/4885CYP19A1 84/4885HSD11B1 186/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 CYP17A1 2761/4885CYP19A1 3464/4885HSD11B1 2171/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 CYP17A1 4055/4885CYP19A1 4640/4885HSD11B1 2019/4885
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, ABCC1 CYP17A1 466/4885CYP19A1 71/4885HSD11B1 1206/4885
US-20090162788-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RER1, ASIC1, GLRA1 CYP17A1 559/4885CYP19A1 113/4885HSD11B1 1538/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.