Tetrylammonium

Tetrylammonium

SCHEMBL4772080

CC[N+](CC)(CC)CC.CC[N+](CC)(CC)CC.O=C([O-])CC(=O)[O-]

nearest known ligand 0.59

Full drug profile on Sugi Atlas →

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CA4 P22748 2/20 0.59
TSHR P16473 1/20 0.47
NFKB1 P19838 1/20 0.47
KCNA1 Q09470 1/20 0.47
KDM4E B2RXH2 1/20 0.44
PMP22 Q01453 1/20 0.44
ATM Q13315 1/20 0.44
FFAR3 O14843 2/20 0.41
HDAC3 O15379 2/20 0.41
HDAC1 Q13547 2/20 0.41
HDAC2 Q92769 2/20 0.41
HDAC8 Q9BY41 2/20 0.41
BBOX1 O75936 5/20 0.39
CA1 P00915 1/20 0.36
SLC22A16 Q86VW1 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrylammonium SCHEMBL8538098 0.97 CA4 (0.56) CA4TSHRNFKB1KCNA1KDM4E
Tetrylammonium SCHEMBL4772090 0.87 CA4 (0.43) CA4TSHRNFKB1KCNA1KDM4E
Tetrylammonium SCHEMBL239682 0.85 TSHR (0.50) CA4TSHRNFKB1KCNA1KDM4E
Tetrylammonium SCHEMBL168440 0.84 TSHR (0.57) TSHRNFKB1KCNA1KDM4EPMP22
Itaconate SCHEMBL5874659 0.83 CA4 (0.39) CA4TSHRNFKB1KCNA1KDM4E
Tetrylammonium SCHEMBL4773294 0.83 MGAM (0.42) CA4TSHRNFKB1KCNA1KDM4E
Tetrylammonium SCHEMBL5874609 0.82 FFAR3 (0.55) TSHRNFKB1KCNA1KDM4EPMP22
Tetrylammonium SCHEMBL8824378 0.82 TSHR (0.47) CA4TSHRNFKB1KCNA1KDM4E
Tetrylammonium SCHEMBL168442 0.81 TSHR (0.53) TSHRNFKB1KCNA1KDM4EPMP22
Tetrylammonium SCHEMBL36800 0.81 TSHR (0.53) CA4TSHRNFKB1KCNA1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 76 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1878493-B1 Method of making a polyisocyanurate/polyurethane foam using carbocation compounds as trimerization catalysts AIR PROD & CHEM (US) 2013-08-21 EP claimed
US-8445555-B2 Stabilized carbanions as trimerization catalysts AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-05-21 US claimed
US-20080015274-A1 Stabilized carbanions as trimerization catalysts EVONIK OPERATIONS GMBH (DE) 2008-01-17 US claimed
EP-1878493-A1 Stabilized carbanions as trimerization catalysts Air Products and Chemicals, Inc. (US) 2008-01-16 EP claimed
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
EP-4700067-A1 COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-25 EP disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
US-20260029706-A1 COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-29 US disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
EP-3657254-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2020-05-27 EP disclosed
US-20200159120-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-05-21 US disclosed
EP-1878493-B1 Method of making a polyisocyanurate/polyurethane foam using carbocation compounds as trimerization catalysts AIR PROD & CHEM (US) 2013-08-21 EP disclosed
US-8445555-B2 Stabilized carbanions as trimerization catalysts AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-05-21 US disclosed
US-20080015274-A1 Stabilized carbanions as trimerization catalysts EVONIK OPERATIONS GMBH (DE) 2008-01-17 US disclosed
EP-1878493-A1 Stabilized carbanions as trimerization catalysts Air Products and Chemicals, Inc. (US) 2008-01-16 EP disclosed
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200159120-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS RPS4X, SIK3, MLX CA4 1589/4885TSHR 439/4885NFKB1 4818/4885
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA CA4 749/4885TSHR 3217/4885NFKB1 2890/4885
US-20260029706-A1 COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT SMC2, F12, SMC1A CA4 1943/4885TSHR 3510/4885NFKB1 4368/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 CA4 281/4885TSHR 770/4885NFKB1 3949/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR CA4 1681/4885TSHR 446/4885NFKB1 3704/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.