Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA4 | P22748 | 2/20 | 0.43 |
| ▸ | TSHR | P16473 | 2/20 | 0.40 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.40 |
| ▸ | KCNA1 | Q09470 | 1/20 | 0.40 |
| ▸ | LDHA | P00338 | 1/20 | 0.38 |
| ▸ | SRR | Q9GZT4 | 1/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.38 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.38 |
| ▸ | ATM | Q13315 | 1/20 | 0.38 |
| ▸ | FFAR3 | O14843 | 4/20 | 0.36 |
| ▸ | HDAC3 | O15379 | 3/20 | 0.36 |
| ▸ | HDAC1 | Q13547 | 3/20 | 0.36 |
| ▸ | HDAC2 | Q92769 | 3/20 | 0.36 |
| ▸ | HDAC8 | Q9BY41 | 3/20 | 0.36 |
| ▸ | BBOX1 | O75936 | 4/20 | 0.35 |
| ▸ | CA1 | P00915 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetrylammonium SCHEMBL4772080 | 0.87 | CA4 (0.59) | CA4TSHRNFKB1KCNA1KDM4E | |
| Tetrylammonium SCHEMBL8538098 | 0.84 | CA4 (0.56) | CA4TSHRNFKB1KCNA1KDM4E | |
| Tetrylammonium SCHEMBL4772087 | 0.84 | LDHA (0.56) | TSHRNFKB1KCNA1LDHASRR | |
| Malonic Acid SCHEMBL105511 | 0.81 | CA4 (0.50) | CA4TSHRLDHASRRFFAR3 | |
| Tetrapropylammonium SCHEMBL104365 | 0.81 | SLC22A1 (0.46) | CA4TSHRLDHASRRFFAR3 | |
| Tetrylammonium SCHEMBL168442 | 0.81 | TSHR (0.53) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Itaconate SCHEMBL5874668 | 0.79 | ALOX15 (0.39) | TSHRNFKB1KCNA1LDHASRR | |
| Malonic Acid SCHEMBL10428616 | 0.79 | CA4 (0.47) | CA4TSHRLDHASRRFFAR3 | |
| Tetrylammonium SCHEMBL239682 | 0.78 | TSHR (0.50) | CA4TSHRNFKB1KCNA1KDM4E | |
| Tetrylammonium SCHEMBL5874617 | 0.78 | FFAR3 (0.46) | TSHRNFKB1KCNA1FFAR3HDAC3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 74 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1878493-B1 | Method of making a polyisocyanurate/polyurethane foam using carbocation compounds as trimerization catalysts | AIR PROD & CHEM (US) | 2013-08-21 | — | — | EP | claimed |
| US-8445555-B2 | Stabilized carbanions as trimerization catalysts | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-05-21 | — | — | US | claimed |
| US-20080015274-A1 | Stabilized carbanions as trimerization catalysts | EVONIK OPERATIONS GMBH (DE) | 2008-01-17 | — | — | US | claimed |
| EP-1878493-A1 | Stabilized carbanions as trimerization catalysts | Air Products and Chemicals, Inc. (US) | 2008-01-16 | — | — | EP | claimed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4700067-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-25 | — | — | EP | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| EP-1878493-B1 | Method of making a polyisocyanurate/polyurethane foam using carbocation compounds as trimerization catalysts | AIR PROD & CHEM (US) | 2013-08-21 | — | — | EP | disclosed |
| US-8445555-B2 | Stabilized carbanions as trimerization catalysts | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-05-21 | — | — | US | disclosed |
| US-20080015274-A1 | Stabilized carbanions as trimerization catalysts | EVONIK OPERATIONS GMBH (DE) | 2008-01-17 | — | — | US | disclosed |
| EP-1878493-A1 | Stabilized carbanions as trimerization catalysts | Air Products and Chemicals, Inc. (US) | 2008-01-16 | — | — | EP | disclosed |
| US-7128976-B2 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2006-10-31 | — | — | US | disclosed |
| US-20030091838-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2003-05-15 | — | — | US | disclosed |
| US-5733661-A | METAL OXIDE CONTAINING IONS OF AN ORGANIC CARBOXYLIC ACID SALT AND/OR IONS OF AN INORGANIC OXOACID SALT | MITSUBISHI CHEMICAL CORPORATION (JP) | 1998-03-31 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | CA4 1589/4885TSHR 439/4885NFKB1 4818/4885 |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | CA4 749/4885TSHR 3217/4885NFKB1 2890/4885 |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SMC2, F12, SMC1A | CA4 1943/4885TSHR 3510/4885NFKB1 4368/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | CA4 281/4885TSHR 770/4885NFKB1 3949/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CA4 1681/4885TSHR 446/4885NFKB1 3704/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.