SCHEMBL482422

SCHEMBL482422

Cc1ccc(S(=O)(=O)Oc2cccc3cccc(S(=O)(=O)O)c23)cc1

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 6/20 0.53
MEN1 O00255 5/20 0.53
GAA P10253 3/20 0.53
ESR1 P03372 1/20 0.53
ESR2 Q92731 1/20 0.53
LMNA P02545 3/20 0.51
MAPK1 P28482 1/20 0.51
CYP1A2 P05177 2/20 0.51
ALDH1A1 P00352 4/20 0.48
KDM4E B2RXH2 2/20 0.48
HPGD P15428 1/20 0.48
MAPT P10636 4/20 0.46
HTT P42858 2/20 0.44
HTR6 P50406 1/20 0.43
HSD11B1 P28845 1/20 0.42
HSD17B3 P37058 1/20 0.42
KEAP1 Q14145 1/20 0.42
NFE2L2 Q16236 1/20 0.42
GFER P55789 1/20 0.41
SNCA P37840 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4079124 0.99 KMT2A (0.52) KMT2AMEN1GAAESR1ESR2
SCHEMBL2066180 0.87 MEN1 (0.51) KMT2AMEN1GAAESR1ESR2
SCHEMBL6743138 0.87 METAP2 (0.51) KMT2AMEN1GAAESR1ESR2
SCHEMBL4079121 0.86 MEN1 (0.53) KMT2AMEN1GAAESR1ESR2
SCHEMBL4081565 0.86 KMT2A (0.50) KMT2AMEN1GAAESR1ESR2
SCHEMBL3978103 0.85 LMNA (0.58) KMT2AMEN1GAAESR1ESR2
SCHEMBL5709597 0.84 KMT2A (0.57) KMT2AMEN1GAAESR1ESR2
SCHEMBL6743646 0.84 MEN1 (0.48) KMT2AMEN1GAAESR1ESR2
SCHEMBL21072922 0.83 KMT2A (0.59) KMT2AMEN1GAAESR1ESR2
SCHEMBL28072677 0.83 KMT2A (0.68) KMT2AMEN1GAAESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 113 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2105794-B1 Novel photoacid generator, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2033966-B1 Novel photoacid generators, resist compositons, and patterning processes SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
EP-2146247-B1 Resist patterning process and manufacturing photo mask SHINETSU CHEMICAL CO (JP) 2015-04-15 EP disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
EP-2267533-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-22 EP disclosed
EP-2244125-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-08 EP disclosed
US-8791288-B2 Acid-labile ester monomer having spirocyclic structure, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-29 US disclosed
US-20060228648-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-10-12 US disclosed
EP-1710230-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2006-10-11 EP disclosed
US-6916591-B2 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-07-12 US disclosed
US-20050048395-A1 Novel sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-03-03 US disclosed
US-20040229162-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-18 US disclosed
US-6713612-B2 Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-03-30 US disclosed
US-6692893-B2 ONIUM SALTS OF ARYLSULFONYLOXYNAPHTHALENESULFONATE ANIONS WITH IODONIUM OR SULFONIUM CATIONS; USE IN DEEP ULTRAVIOLET LITHOGRAPHY SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-17 US disclosed
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-04 US disclosed
US-20030215738-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-20 US disclosed
US-20020076643-A1 Novel onium salts, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-06-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process VEGFA, DNMT3A, PIM3 KMT2A 1111/4885MEN1 3540/4885GAA 1760/4885
US-20030215738-A1 Photoacid generators, chemically amplified resist compositions, and patterning process CCNH, PAH, POLH KMT2A 890/4885MEN1 4466/4885GAA 1315/4885
US-20020076643-A1 Novel onium salts, photoacid generators, resist compositions, and patterning process PNN, PI4K2B, PI4K2A KMT2A 3202/4885MEN1 4165/4885GAA 2434/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.