Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.54 |
| ▸ | HTT | P42858 | 2/20 | 0.49 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.49 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.48 |
| ▸ | LMNA | P02545 | 1/20 | 0.48 |
| ▸ | PPARG | P37231 | 2/20 | 0.48 |
| ▸ | ENPP2 | Q13822 | 3/20 | 0.47 |
| ▸ | ENPP3 | O14638 | 2/20 | 0.47 |
| ▸ | ENPP1 | P22413 | 2/20 | 0.47 |
| ▸ | MEN1 | O00255 | 2/20 | 0.47 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.47 |
| ▸ | MAPT | P10636 | 2/20 | 0.47 |
| ▸ | NPC1 | O15118 | 1/20 | 0.47 |
| ▸ | RAB9A | P51151 | 1/20 | 0.47 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.46 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.46 |
| ▸ | VDR | P11473 | 1/20 | 0.45 |
| ▸ | CA12 | O43570 | 2/20 | 0.45 |
| ▸ | CA2 | P00918 | 2/20 | 0.45 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5709637 | 1.00 | TDP1 (0.54) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL5709627 | 0.94 | MEN1 (0.51) | HTTSMN1; SMN2ALDH1A1LMNAPPARG | |
| SCHEMBL482368 | 0.91 | TDP1 (0.46) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL5171841 | 0.91 | ALDH1A1 (0.50) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL2955938 | 0.90 | VDR (0.49) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL2964106 | 0.90 | VDR (0.49) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL2962485 | 0.90 | VDR (0.49) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL3144536 | 0.90 | VDR (0.49) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL64190 | 0.90 | VDR (0.49) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL6741643 | 0.89 | MEN1 (0.56) | TDP1HTTSMN1; SMN2ALDH1A1LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 95 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2244124-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-26 | — | — | EP | disclosed |
| EP-2244126-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-9023582-B2 | Photosensitive polymer, resist composition including the photosensitive polymer and method of preparing resist pattern using the resist composition | SAMSUNG DISPLAY CO., LTD. (KR) | 2015-05-05 | — | — | US | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| EP-2267533-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-22 | — | — | EP | disclosed |
| EP-2244125-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-08 | — | — | EP | disclosed |
| EP-2146245-B1 | Resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-25 | — | — | EP | disclosed |
| US-20140141372-A1 | PHOTOSENSITIVE POLYMER, RESIST COMPOSITION INCLUDING THE PHOTOSENSITIVE POLYMER AND METHOD OF PREPARING RESIST PATTERN USING THE RESIST COMPOSITION | SAMSUNG DISPLAY CO., LTD. (KR) | 2014-05-22 | — | — | US | disclosed |
| US-8592133-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-26 | — | — | US | disclosed |
| US-20020111459-A1 | Preparation of polymer, and resist composition using the polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-15 | — | — | US | disclosed |
| US-20020081521-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-06-27 | — | — | US | disclosed |
| EP-1204001-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-05-08 | — | — | EP | disclosed |
| US-20020039701-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-04 | — | — | US | disclosed |
| US-20010038971-A1 | Chemical amplification, positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-11-08 | — | — | US | disclosed |
| US-20010035394-A1 | Chemically amplified positive resist composition and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-11-01 | — | — | US | disclosed |
| US-20010033994-A1 | Chemical amplification, positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-10-25 | — | — | US | disclosed |
| US-20010031421-A1 | Chemical amplification resist compositions | SHIN-ETSU CHEMICAL CO., LTD. OF (JP) | 2001-10-18 | — | — | US | disclosed |
| EP-1136885-A1 | Chemically amplified positive resist composition and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-26 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |