SCHEMBL482368

SCHEMBL482368

Cc1ccc(S(=O)(=O)Oc2ccc(S(=O)(=O)OS(c3ccccc3)(c3ccccc3)c3ccc(OC(C)(C)C)cc3)cc2)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.46
ALDH1A1 P00352 4/20 0.42
LMNA P02545 1/20 0.42
PPARG P37231 1/20 0.42
ENPP2 Q13822 3/20 0.41
HTT P42858 2/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
ENPP3 O14638 2/20 0.41
ENPP1 P22413 2/20 0.41
MEN1 O00255 3/20 0.40
KMT2A Q03164 3/20 0.40
MAPT P10636 2/20 0.40
NPC1 O15118 1/20 0.40
RAB9A P51151 1/20 0.40
CA12 O43570 2/20 0.39
CA2 P00918 2/20 0.39
KEAP1 Q14145 1/20 0.39
NFE2L2 Q16236 1/20 0.39
CYP2C9 P11712 1/20 0.39
HPGD P15428 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5709656 0.95 ENPP2 (0.44) ALDH1A1LMNAPPARGENPP2HTT
SCHEMBL65270 0.95 HTT (0.45) TDP1ALDH1A1LMNAHTTSMN1; SMN2
SCHEMBL64770 0.95 HTT (0.45) TDP1ALDH1A1LMNAHTTSMN1; SMN2
SCHEMBL6741024 0.91 MEN1 (0.49) TDP1ALDH1A1LMNAENPP2HTT
SCHEMBL482593 0.91 TDP1 (0.54) TDP1ALDH1A1LMNAPPARGENPP2
SCHEMBL5709637 0.91 TDP1 (0.54) TDP1ALDH1A1LMNAPPARGENPP2
SCHEMBL3197600 0.89 TDP1 (0.40) TDP1ALDH1A1LMNAHTTSMN1; SMN2
SCHEMBL8496289 0.89 BCHE (0.43) TDP1ALDH1A1ENPP2HTTSMN1; SMN2
SCHEMBL64968 0.89 BCHE (0.43) TDP1ALDH1A1ENPP2HTTSMN1; SMN2
SCHEMBL5171841 0.87 ALDH1A1 (0.50) TDP1ALDH1A1LMNAPPARGENPP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 60 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-9023582-B2 Photosensitive polymer, resist composition including the photosensitive polymer and method of preparing resist pattern using the resist composition SAMSUNG DISPLAY CO., LTD. (KR) 2015-05-05 US disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
EP-2267533-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-22 EP disclosed
EP-2146245-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-25 EP disclosed
US-20140141372-A1 PHOTOSENSITIVE POLYMER, RESIST COMPOSITION INCLUDING THE PHOTOSENSITIVE POLYMER AND METHOD OF PREPARING RESIST PATTERN USING THE RESIST COMPOSITION SAMSUNG DISPLAY CO., LTD. (KR) 2014-05-22 US disclosed
US-8592133-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-26 US disclosed
US-8586282-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-19 US disclosed
US-8541158-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-24 US disclosed
EP-2100887-B1 Lactone-containing compound, polymer, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2013-07-03 EP disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-7282316-B2 Sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-16 US disclosed
US-20070099113-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099112-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
EP-1780199-A1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed
EP-1780198-A1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed
EP-1077391-B1 Onium salts, photoacid generators for resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2006-09-27 EP disclosed
US-20050048395-A1 Novel sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-03-03 US disclosed
US-6440634-B1 MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS SHIN-ETSU CHEMICAL CO., LTD (JP) 2002-08-27 US disclosed
EP-1077391-A1 Onium salts, photoacid generators for resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-02-21 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST TDP1 4617/4885ALDH1A1 2781/4885LMNA 3638/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.