Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL4224848 | 1.00 | — | — | |
| Water SCHEMBL28717995 | 1.00 | — | — | |
| Water SCHEMBL21678775 | 0.87 | — | — | |
| Water SCHEMBL27752698 | 0.87 | — | — | |
| Water SCHEMBL28421945 | 0.87 | — | — | |
| Water SCHEMBL28478801 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL27712708 | 0.87 | — | — | |
| Water SCHEMBL5202167 | 0.82 | — | — | |
| Water SCHEMBL10723406 | 0.82 | — | — | |
| Water SCHEMBL6390838 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 85 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12363987-B2 | Partial metal grain size control to improve CMP loading effect | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-07-15 | — | — | US | claimed |
| CN-101912790-A | Production method of high-temperature resistant and anti-sulfurization catalyst carrier material | WEIHAI PIDC NEW MATERIALS CO LTD | 2010-12-15 | — | — | CN | claimed |
| US-7326984-B2 | MIS capacitor and method of formation | MICRON TECHNOLOGY, INC (US) | 2008-02-05 | — | — | US | claimed |
| US-20070138529-A1 | MIS capacitor and method of formation | ROUND ROCK RESEARCH, LLC | 2007-06-21 | — | — | US | claimed |
| US-7164165-B2 | MIS capacitor | MICRON TECHNOLOGY, INC. (US) | 2007-01-16 | — | — | US | claimed |
| US-20060244027-A1 | MIS capacitor and method of formation | ROUND ROCK RESEARCH, LLC | 2006-11-02 | — | — | US | claimed |
| US-7029985-B2 | Method of forming MIS capacitor | MICRON TECHNOLOGY, INC. (US) | 2006-04-18 | — | — | US | claimed |
| US-6753618-B2 | MIM capacitor with metal nitride electrode materials and method of formation | MICRON TECHNOLOGY, INC. | 2004-06-22 | — | — | US | claimed |
| US-20040046197-A1 | MIS capacitor and method of formation | ROUND ROCK RESEARCH, LLC | 2004-03-11 | — | — | US | claimed |
| US-20030213987-A1 | MIS capacitor and method of formation | ROUND ROCK RESEARCH, LLC | 2003-11-20 | — | — | US | claimed |
| US-20030205729-A1 | MIM capacitor with metal nitride electrode materials and method of formation | ROUND ROCK RESEARCH, LLC | 2003-11-06 | — | — | US | claimed |
| WO-2003079417-A2 | MIM CAPACITOR WITH METAL NITRIDE ELECTRODE MATERIALS AND METHOD OF FORMATION | MICRON TECHNOLOGY, INC. (US) | 2003-09-25 | — | — | WO | claimed |
| US-20030168750-A1 | MIM capacitor with metal nitride electrode materials and method of formation | ROUND ROCK RESEARCH, LLC | 2003-09-11 | — | — | US | claimed |
| US-20260129934-A1 | METHOD OF MANUFACTURING A REPLACEMENT METAL GATE DEVICE STRUCTURE AND METAL GATE DEVICE STRUCTURE | TAIWAN SEMICONDUCTOR MFG (TW) | 2026-05-07 | — | — | US | disclosed |
| US-12588438-B2 | Layer structures including dielectric layer, methods of manufacturing dielectric layer, electronic device including dielectric layer, and electronic apparatus including electronic device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-03-24 | — | — | US | disclosed |
| US-12512323-B2 | Method of manufacturing a replacement metal gate device structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-30 | — | — | US | disclosed |
| US-20030213987-A1 | MIS capacitor and method of formation | ROUND ROCK RESEARCH, LLC | 2003-11-20 | — | — | US | disclosed |
| US-20030205729-A1 | MIM capacitor with metal nitride electrode materials and method of formation | ROUND ROCK RESEARCH, LLC | 2003-11-06 | — | — | US | disclosed |
| WO-2003079417-A2 | MIM CAPACITOR WITH METAL NITRIDE ELECTRODE MATERIALS AND METHOD OF FORMATION | MICRON TECHNOLOGY, INC. (US) | 2003-09-25 | — | — | WO | disclosed |
| US-20030168750-A1 | MIM capacitor with metal nitride electrode materials and method of formation | ROUND ROCK RESEARCH, LLC | 2003-09-11 | — | — | US | disclosed |