SCHEMBL4995251

SCHEMBL4995251

CC[Si](O)(CC)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.35

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.34
KMT2A Q03164 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
ALDH1A1 P00352 2/20 0.32
GRIN2D O15399 3/20 0.32
GRIN3B O60391 3/20 0.32
GRIN1 Q05586 3/20 0.32
GRIN2A Q12879 3/20 0.32
GRIN2B Q13224 3/20 0.32
GRIN2C Q14957 3/20 0.32
GRIN3A Q8TCU5 3/20 0.32
EPHX2 P34913 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4999619 0.81 HSD11B1 (0.35) KMT2ASMN1; SMN2ALDH1A1GRIN2DGRIN3B
SCHEMBL4999914 0.72 GRIN2D (0.36) LMNASMN1; SMN2GRIN2DGRIN3BGRIN1
SCHEMBL4999768 0.72 GRIN2D (0.36) LMNASMN1; SMN2GRIN2DGRIN3BGRIN1
SCHEMBL14247631 0.71 GRIN2D (0.38) LMNASMN1; SMN2GRIN2DGRIN3BGRIN1
SCHEMBL5002841 0.70 MEN1 (0.36) LMNAKMT2AALDH1A1GRIN2DGRIN3B
SCHEMBL4999949 0.68 MEN1 (0.32) LMNAKMT2AALDH1A1GRIN2DGRIN3B
SCHEMBL4999754 0.68 ALDH1A1 (0.33) LMNAKMT2AALDH1A1GRIN2DGRIN3B
SCHEMBL4996434 0.67 MEN1 (0.34) LMNAKMT2A
SCHEMBL5002934 0.67 MEN1 (0.34) LMNAKMT2A
SCHEMBL7391547 0.66 GRIN2D (0.39) LMNASMN1; SMN2GRIN2DGRIN3BGRIN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed