SCHEMBL5002841

SCHEMBL5002841

CC[Si](CC)(O[Si](CC)(CC)C12CC3CC(CC(C3)C1)C2)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.36

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.36
KMT2A Q03164 1/20 0.36
GRIN2D O15399 3/20 0.31
GRIN3B O60391 3/20 0.31
GRIN1 Q05586 3/20 0.31
GRIN2A Q12879 3/20 0.31
GRIN2B Q13224 3/20 0.31
GRIN2C Q14957 3/20 0.31
GRIN3A Q8TCU5 3/20 0.31
ALDH1A1 P00352 2/20 0.31
NPSR1 Q6W5P4 1/20 0.30
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4999754 0.84 ALDH1A1 (0.33) MEN1KMT2AGRIN2DGRIN3BGRIN1
SCHEMBL4996434 0.83 MEN1 (0.34) MEN1KMT2ALMNA
SCHEMBL27572715 0.78
SCHEMBL4999949 0.71 MEN1 (0.32) MEN1KMT2AGRIN2DGRIN3BGRIN1
SCHEMBL4995251 0.70 LMNA (0.34) KMT2AGRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL4999619 0.70 HSD11B1 (0.35) KMT2AGRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL5002934 0.70 MEN1 (0.34) MEN1KMT2ALMNA
SCHEMBL4999713 0.69 GRIN2D (0.35) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL105577 0.68 LMNA (0.37) MEN1KMT2AGRIN2DGRIN3BGRIN1
SCHEMBL103781 0.68 MEN1 (0.36) MEN1KMT2AGRIN2DGRIN3BGRIN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed