SCHEMBL4996325

SCHEMBL4996325

CCO[Si](OCC)(c1ccccc1)C(C)CC

nearest known ligand 0.32

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.32
TRPA1 O75762 2/20 0.32
L3MBTL1 Q9Y468 1/20 0.31
TSHR P16473 1/20 0.31
LTA4H P09960 1/20 0.31
MPO P05164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL645724 0.84 L3MBTL1 (0.32) LMNAL3MBTL1LTA4HMPO
SCHEMBL705429 0.84 L3MBTL1 (0.32) LMNAL3MBTL1LTA4HMPO
SCHEMBL1314542 0.82 LMNA (0.33) LMNATRPA1L3MBTL1TSHRLTA4H
SCHEMBL4999817 0.82 LMNA (0.33) LMNATRPA1TSHR
SCHEMBL6144385 0.82 LMNA (0.33) LMNAL3MBTL1LTA4H
SCHEMBL21186439 0.81 SMN1; SMN2 (0.40) LMNATSHR
SCHEMBL1314751 0.81 LMNA (0.32) LMNATRPA1L3MBTL1TSHRLTA4H
SCHEMBL11737040 0.81 L3MBTL1 (0.31) L3MBTL1LTA4HMPO
SCHEMBL6697038 0.81 MAOA (0.37)
SCHEMBL3898314 0.79 MAPT (0.33) LMNATRPA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2584005-B1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF TOSOH CORP (JP) 2018-02-21 EP disclosed
US-8907038-B2 Typical metal containing polysiloxane composition, process for its production, and its uses TOSOH CORPORATION (JP) 2014-12-09 US disclosed
EP-2584005-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF Tosoh Corporation (JP) 2013-04-24 EP disclosed
US-20130090447-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR ITS PRODUCTION, AND ITS USES TOSOH CORPORATION (JP) 2013-04-11 US disclosed
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed