SCHEMBL705429

SCHEMBL705429

CCO[Si](OCC)(c1ccccc1)C(C)C

nearest known ligand 0.32

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 1/20 0.32
LTA4H P09960 1/20 0.32
MPO P05164 1/20 0.32
LMNA P02545 2/20 0.31
TP53 P04637 1/20 0.31
PIN1 Q13526 1/20 0.31
POLB P06746 1/20 0.31
SIGMAR1 Q99720 2/20 0.31
ADRA2A P08913 1/20 0.30
ADRA2B P18089 1/20 0.30
ADRA2C P18825 1/20 0.30
TAAR1 Q96RJ0 4/20 0.30
SLC6A2 P23975 2/20 0.30
MAOA P21397 1/20 0.30
SLC6A4 P31645 1/20 0.30
SLC6A3 Q01959 1/20 0.30
CYP2A6 P11509 1/20 0.30
ADORA2A P29274 1/20 0.30
ADORA1 P30542 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19816429 0.90 TRPA1 (0.31) L3MBTL1
SCHEMBL703393 0.89
SCHEMBL645724 0.88 L3MBTL1 (0.32) L3MBTL1LTA4HMPOLMNATP53
SCHEMBL19816740 0.87 LTA4H (0.35) LTA4HLMNAADRA2AADRA2BADRA2C
SCHEMBL708164 0.84 LMNA (0.35) LTA4HLMNASIGMAR1
SCHEMBL11737040 0.84 L3MBTL1 (0.31) L3MBTL1LTA4HMPO
SCHEMBL4996325 0.84 LMNA (0.32) L3MBTL1LTA4HMPOLMNA
SCHEMBL6697038 0.84 MAOA (0.37) SIGMAR1TAAR1SLC6A2MAOASLC6A4
SCHEMBL11784707 0.82 SMN1; SMN2 (0.32) L3MBTL1LMNATAAR1
SCHEMBL6144385 0.82 LMNA (0.33) L3MBTL1LTA4HLMNATP53PIN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US claimed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US claimed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP claimed
CN-109715680-A The method for preparing high-cis -1,4- polydiene with the carbon monoxide-olefin polymeric based on lanthanide series 株式会社普利司通 2019-05-03 CN claimed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO claimed
CN-109715680-B Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions 株式会社普利司通 2021-10-19 CN disclosed
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US disclosed
EP-3491030-B1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORP (JP) 2021-03-24 EP disclosed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US disclosed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP disclosed
CN-109715680-A The method for preparing high-cis -1,4- polydiene with the carbon monoxide-olefin polymeric based on lanthanide series 株式会社普利司通 2019-05-03 CN disclosed
EP-2584005-B1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF TOSOH CORP (JP) 2018-02-21 EP disclosed
CN-100335488-C Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2007-09-05 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
CN-1803805-A Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2006-07-19 CN disclosed
CN-1793151-A Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2006-06-28 CN disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed
CN-1437228-A Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2003-08-20 CN disclosed