SCHEMBL501829

SCHEMBL501829

COc1ccc(C(=O)OCCn2cnc3ccccc32)cc1

nearest known ligand 0.65

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 7/20 0.65
HTT P42858 3/20 0.65
KMT2A Q03164 3/20 0.57
GAA P10253 1/20 0.55
MAPT P10636 1/20 0.54
CDYL2 Q8N8U2 1/20 0.54
CDYL Q9Y232 1/20 0.54
CDY1; CDY1B Q9Y6F8 1/20 0.54
MAPK1 P28482 1/20 0.54
L3MBTL1 Q9Y468 1/20 0.53
LMNA P02545 3/20 0.52
NPC1 O15118 1/20 0.51
RAB9A P51151 1/20 0.51
GALR3 O60755 1/20 0.51
TSHR P16473 1/20 0.51
EGLN3 Q9H6Z9 1/20 0.50
LTA4H P09960 1/20 0.50
ALDH1A1 P00352 1/20 0.50
PKM P14618 1/20 0.50
MEN1 O00255 1/20 0.49

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14369857 0.89 CDYL2 (0.58) SMN1; SMN2HTTKMT2AGAAMAPT
SCHEMBL75393 0.87 EGLN3 (0.61) SMN1; SMN2HTTGAAMAPTL3MBTL1
SCHEMBL501927 0.85 SMN1; SMN2 (0.58) SMN1; SMN2HTTGAAMAPTL3MBTL1
SCHEMBL501881 0.83 SMN1; SMN2 (0.59) SMN1; SMN2HTTKMT2AGAAMAPT
SCHEMBL14369853 0.83 SMN1; SMN2 (0.54) SMN1; SMN2HTTKMT2AMAPTCDYL2
SCHEMBL502049 0.79 SMN1; SMN2 (0.66) SMN1; SMN2HTTKMT2AGAAMAPT
SCHEMBL501835 0.78 SMN1; SMN2 (0.60) SMN1; SMN2HTTKMT2AGAAMAPT
SCHEMBL24177942 0.77 SMN1; SMN2 (0.60) SMN1; SMN2HTTKMT2AGAAMAPT
SCHEMBL24177940 0.77 SMN1; SMN2 (0.66) SMN1; SMN2HTTKMT2AGAAMAPT
SCHEMBL14369852 0.77 SMN1; SMN2 (0.51) SMN1; SMN2HTTKMT2AGAAMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2033966-B1 Novel photoacid generators, resist compositons, and patterning processes SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-8945809-B2 Fluorinated monomer, fluorinated polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-03 US disclosed
US-8933251-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-01-13 US disclosed
US-8609889-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-12-17 US disclosed
US-20130231491-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-05 US disclosed
US-8431323-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-30 US disclosed
US-8420292-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-16 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-8313886-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-20 US disclosed
US-8283104-B2 Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-09 US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 US disclosed
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 US disclosed
US-7670751-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-02 US disclosed
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 US disclosed
US-20090274984-A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 US disclosed
US-20090246686-A1 POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 US disclosed
EP-2033966-A2 Movel photoacid generators, resist compositons, and patterning processes Shin-Etsu Chemical Co., Ltd. (JP) 2009-03-11 EP disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed
US-7276324-B2 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-02 US disclosed
US-7276324-B2 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 SMN1; SMN2 4173/4885HTT 3546/4885KMT2A 3509/4885
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, ASH2L SMN1; SMN2 2410/4885HTT 1294/4885KMT2A 1543/4885
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, RAD54L SMN1; SMN2 2488/4885HTT 1762/4885KMT2A 2036/4885
US-20090274984-A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS WDR1, EGLN1, RER1 SMN1; SMN2 3853/4885HTT 3324/4885KMT2A 463/4885
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS CYP21A2, C1S, C1R SMN1; SMN2 4504/4885HTT 4485/4885KMT2A 2308/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.