Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HRH3 | Q9Y5N1 | 2/20 | 0.48 |
| ▸ | KDM4E | B2RXH2 | 6/20 | 0.46 |
| ▸ | HTT | P42858 | 3/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.43 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.42 |
| ▸ | MEN1 | O00255 | 1/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.42 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.42 |
| ▸ | ATM | Q13315 | 1/20 | 0.41 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL501715 | 1.00 | HRH3 (0.48) | HRH3KDM4EHTTALDH1A1SMN1; SMN2 | |
| SCHEMBL2680332 | 1.00 | HRH3 (0.48) | HRH3KDM4EHTTALDH1A1SMN1; SMN2 | |
| SCHEMBL501637 | 0.98 | HRH3 (0.52) | HRH3KDM4EHTTALDH1A1SMN1; SMN2 | |
| SCHEMBL10852700 | 0.98 | HRH3 (0.52) | HRH3KDM4EHTTALDH1A1SMN1; SMN2 | |
| SCHEMBL720901 | 0.98 | HRH3 (0.52) | HRH3KDM4EHTTALDH1A1SMN1; SMN2 | |
| SCHEMBL501546 | 0.98 | HRH3 (0.52) | HRH3KDM4EHTTALDH1A1SMN1; SMN2 | |
| SCHEMBL64198 | 0.91 | HRH3 (0.44) | HRH3KDM4EHTTALDH1A1SMN1; SMN2 | |
| SCHEMBL12371266 | 0.91 | HRH3 (0.51) | HRH3ALDH1A1KMT2AMEN1CYP1A2 | |
| SCHEMBL5487629 | 0.91 | KDM4E (0.43) | KDM4EHTTALDH1A1SMN1; SMN2 | |
| SCHEMBL1277024 | 0.90 | HRH3 (0.54) | HRH3ALDH1A1KMT2AMEN1CYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8945809-B2 | Fluorinated monomer, fluorinated polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-03 | — | — | US | disclosed |
| US-8933251-B2 | Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-01-13 | — | — | US | disclosed |
| US-8609889-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-12-17 | — | — | US | disclosed |
| US-20130231491-A1 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-09-05 | — | — | US | disclosed |
| US-8431323-B2 | Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-30 | — | — | US | disclosed |
| US-8420292-B2 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-16 | — | — | US | disclosed |
| US-8394570-B2 | Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-8313886-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-20 | — | — | US | disclosed |
| US-8283104-B2 | Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-09 | — | — | US | disclosed |
| US-8268528-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-09-18 | — | — | US | disclosed |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-23 | — | — | US | disclosed |
| US-20110003247-A1 | PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-06 | — | — | US | disclosed |
| US-20100266957-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-10-21 | — | — | US | disclosed |
| US-20100209827-A1 | NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100136482-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100112482-A1 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-05-06 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-04 | — | — | US | disclosed |
| US-20090246686-A1 | POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | AFF1, H1-0, FRG1 | HRH3 78/4885KDM4E 1789/4885HTT 1251/4885 |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, ASH2L | HRH3 77/4885KDM4E 3411/4885HTT 1294/4885 |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, RAD54L | HRH3 172/4885KDM4E 3334/4885HTT 1762/4885 |
| US-20110003247-A1 | PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | GRHPR, GLRA3, GLRA1 | HRH3 2026/4885KDM4E 3542/4885HTT 690/4885 |
| US-20100112482-A1 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS | ZYX, FOXO1, CAPZA1 | HRH3 1440/4885KDM4E 1954/4885HTT 4735/4885 |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | TYK2, VRK2, ARSA | HRH3 2115/4885KDM4E 2322/4885HTT 1298/4885 |
| US-20100209827-A1 | NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | DAP3, MRPS23, ASIC3 | HRH3 643/4885KDM4E 3897/4885HTT 2106/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.