SCHEMBL503560

SCHEMBL503560

CC(=CC(C)(C)C12CC3CC(CC(C3)C1)C2)C(=O)O

nearest known ligand 0.41

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.35
CYP2C9 P11712 1/20 0.35
CD81 P60033 1/20 0.34
LMNA P02545 1/20 0.32
EPHX1 P07099 2/20 0.32
GLA P06280 1/20 0.32
EPHX2 P34913 1/20 0.31
ALDH1A1 P00352 2/20 0.30
MEN1 O00255 1/20 0.30
MAPK1 P28482 1/20 0.30
KMT2A Q03164 1/20 0.30
HTT P42858 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL701599 0.86 THRB (0.35) THRBCYP2C9CD81LMNAEPHX1
SCHEMBL700266 0.84 PKM (0.34) CD81
SCHEMBL503461 0.83 ALDH1A1 (0.31) CD81ALDH1A1HTT
SCHEMBL1990174 0.80 THRB (0.32) THRBCYP2C9CD81ALDH1A1KMT2A
SCHEMBL11928274 0.79 CD81 (0.31) CD81
SCHEMBL1994420 0.78 THRB (0.33) THRBCYP2C9CD81EPHX2ALDH1A1
Acetic Acid SCHEMBL700515 0.72 THRB (0.42) THRBCYP2C9LMNAEPHX1EPHX2
SCHEMBL10322379 0.71 GLA (0.30) THRBCYP2C9GLA
SCHEMBL5669232 0.70 GLA (0.33) THRBCYP2C9LMNAGLAMEN1
SCHEMBL11634182 0.70 GRIN2D (0.32) THRBCYP2C9LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 72 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9527938-B2 Copolymer for lithography and method of manufacturing the same, resist composition, and method of manufacturing substrate MITSUBISHI RAYON CO., LTD. (JP) 2016-12-27 US claimed
US-20150099230-A1 COPOLYMER FOR LITHOGRAPHY AND METHOD OF MANUFACTURING THE SAME, RESIST COMPOSITION, AND METHOD OF MANUFACTURING SUBSTRATE MITSUBISHI RAYON CO., LTD. (JP) 2015-04-09 US claimed
EP-2287671-B1 Process for forming a coated substrate COMMW SCIENT IND RES ORG (AU) 2012-06-06 EP claimed
EP-2287671-A1 Process for forming a coated substrate Commonwealth Scientific and Industrial Research Organisation (AU) 2011-02-23 EP claimed
US-20200201176-A1 Resist Composition and Resist Pattern Forming Method TOKYO ELECTRON LIMITED (JP) 2020-06-25 US disclosed
US-10336851-B2 Copolymer for semiconductor lithography, resist composition, and method for manufacturing substrate MITSUBISHI CHEMICAL CORPORATION 2019-07-02 US disclosed
US-20190146340-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2019-05-16 US disclosed
EP-1708027-B1 UPPER LAYER FILM FORMING COMPOSITION FOR LIQUID IMMERSION AND METHOD OF FORMING PHOTORESIST PATTERN JSR CORP (JP) 2019-03-13 EP disclosed
US-9850334-B2 Manufacturing method of polymer TOYO GOSEI CO., LTD. (JP) 2017-12-26 US disclosed
US-9733564-B2 Copolymers for lithography and method for producing same, resist composition, method for producing substrate with pattern formed thereupon, method for evaluating copolymers, and method for analyzing copolymer compositions MITSUBISHI CHEMICAL CORPORATION (JP) 2017-08-15 US disclosed
US-9594303-B2 Resist pattern-forming method and photoresist composition JSR CORPORATION (JP) 2017-03-14 US disclosed
US-9587065-B2 Composition for pattern formation, and pattern-forming method JSR CORPORATION (JP) 2017-03-07 US disclosed
US-20070269754-A1 Acrylic Polymer and Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-20070054214-A1 Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions JSR CORPORATION (JP) 2007-03-08 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-20060234154-A1 Mixture containing acid generator and free radical catalyst; acrylated ester monomer JSR CORPORATION (JP) 2006-10-19 US disclosed
EP-1480079-A2 Photosensitive resin composition FUJI PHOTO FILM CO., LTD. (JP) 2004-11-24 EP disclosed
US-20040009430-A1 Photosensitive resin composition FUJI PHOTO FILM CO., LTD. 2004-01-15 US disclosed
EP-1376232-A1 Photosensitive resin composition FUJI PHOTO FILM CO., LTD. (JP) 2004-01-02 EP disclosed