SCHEMBL503740

SCHEMBL503740

O=C1CCC(=O)N1OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CA2 P00918 15/20 0.39
CA1 P00915 14/20 0.39
PARL Q9H300 2/20 0.39
MMP1 P03956 2/20 0.35
MMP2 P08253 2/20 0.35
MMP9 P14780 2/20 0.35
MMP8 P22894 2/20 0.35
MMP13 P45452 2/20 0.35
F2 P00734 3/20 0.33
PRSS1 P07477 3/20 0.33
PRSS2 P07478 3/20 0.33
PRSS3 P35030 3/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL215806 0.98 PARL (0.40) CA2CA1PARLMMP1MMP2
SCHEMBL4837339 0.79 CA2 (0.41) CA2CA1MMP1MMP2MMP9
SCHEMBL13179959 0.79 CA2 (0.35) CA2CA1MMP1MMP2MMP9
SCHEMBL4834763 0.79 CA2 (0.42) CA2CA1MMP1MMP2MMP9
SCHEMBL27216403 0.78 CA2 (0.36) CA2CA1MMP1MMP2MMP9
SCHEMBL3087267 0.77 PARL (0.50) CA2PARLMMP2
SCHEMBL64814 0.77 PARL (0.50) CA2PARLMMP2
SCHEMBL4835348 0.77 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL6743140 0.77 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL28476420 0.76 CA2 (0.34) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 274 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117795418-A Chemically amplified positive resist composition for pattern profile and resolution improvement YC化学制品株式会社 2024-03-29 CN claimed
US-11906900-B2 Chemically amplified positive photoresist composition for improving pattern profile YOUNG CHANG CHEMICAL CO., LTD (KR) 2024-02-20 US claimed
US-11586109-B2 Chemically-amplified-type negative-type photoresist composition YOUNG CHANG CHEMICAL CO., LTD (KR) 2023-02-21 US claimed
CN-109154776-B Chemically amplified negative photoresist composition 荣昌化学制品株式会社 2022-06-28 CN claimed
EP-3435160-B1 NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER, HAVING HIGH RESOLUTION AND HIGH ASPECT RATIO YOUNG CHANG CHEMICAL CO LTD (KR) 2022-05-04 EP claimed
CN-109073973-B Negative photoresist composition for KrF laser with high resolution and high aspect ratio 荣昌化学制品株式会社 2021-09-28 CN claimed
US-20210216013-A1 CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR IMPROVING PATTERN PROFILE YOUNG CHANG CHEMICAL CO., LTD (KR) 2021-07-15 US claimed
CN-107850841-B Negative photoresist composition for KrF laser for forming semiconductor pattern 荣昌化学制品株式会社 2021-04-02 CN claimed
CN-112313580-A Chemically amplified positive resist composition for pattern profile improvement 荣昌化学制品株式会社 2021-02-02 CN claimed
US-10775699-B2 Negative photoresist composition for KRF laser, having high resolution and high aspect ratio YOUNG CHANG CHEMICAL CO., LTD (KR) 2020-09-15 US claimed
US-20190137871-A1 CHEMICALLY-AMPLIFIED-TYPE NEGATIVE-TYPE PHOTORESIST COMPOSITION YCCHEM CO., LTD. (KR) 2019-05-09 US claimed
US-20190101827-A1 NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER, HAVING HIGH RESOLUTION AND HIGH ASPECT RATIO YCCHEM CO., LTD. (KR) 2019-04-04 US claimed
EP-3435160-A1 NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER, HAVING HIGH RESOLUTION AND HIGH ASPECT RATIO Young Chang Chemical Co., Ltd. (KR) 2019-01-30 EP claimed
US-10162261-B2 Negative photoresist composition for KrF laser for forming semiconductor patterns YOUNG CHANG CHEMICAL CO., LTD (KR) 2018-12-25 US claimed
US-20180203351-A1 NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER FOR FORMING SEMICONDUCTOR PATTERNS YCCHEM CO., LTD. (KR) 2018-07-19 US claimed
US-6800418-B2 ALLOWING DEVELOPMENT WITH CONVENTIONAL DEVELOPERS AND HAVING A HIGH TRANSMITTANCE AT A F2 EXCIMER LASER WAVELENGTH OF 157 NM, HYDROPHILICITY, ADHESION TO UNDERLAYER SAMSUNG ELECTRONICS (KR) 2004-10-05 US claimed
US-20030157430-A1 Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same SAMSUNG ELECTRONICS CO., LTD. 2003-08-21 US claimed
US-12503433-B2 Acetal-based compound, acetal-based prepolymer, acetal-based polymer, and photoresist composition comprising the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-12-23 US disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed
EP-1078945-A2 Polymer for use in a photoresist composition SAMSUNG ELECTRONICS CO. LTD. (KR) 2001-02-28 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12503433-B2 Acetal-based compound, acetal-based prepolymer, acetal-based polymer, and photoresist composition comprising the same PARP10, ADCY10, APRT CA2 3753/4885CA1 1485/4885PARL 2604/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.