Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PARL | Q9H300 | 4/20 | 0.50 |
| ▸ | MMP2 | P08253 | 2/20 | 0.33 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.30 |
| ▸ | CA2 | P00918 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3087267 | 1.00 | PARL (0.50) | PARLMMP2ALOX12CA2 | |
| SCHEMBL16883338 | 0.92 | PARL (0.43) | PARLMMP2 | |
| SCHEMBL12889904 | 0.83 | PARL (0.43) | PARLMMP2 | |
| SCHEMBL14983968 | 0.79 | PARL (0.40) | PARL | |
| SCHEMBL215806 | 0.79 | PARL (0.40) | PARLMMP2CA2 | |
| SCHEMBL14321874 | 0.79 | PARL (0.40) | PARL | |
| SCHEMBL499047 | 0.78 | PARL (0.46) | PARLCA2 | |
| SCHEMBL503740 | 0.77 | CA2 (0.39) | PARLMMP2CA2 | |
| SCHEMBL3853587 | 0.76 | KDM4E (0.30) | PARL | |
| SCHEMBL18730404 | 0.75 | PARL (0.43) | PARL |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 4209 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-121873631-B | Spin-on carbon composition, semiconductor preparation method and semiconductor device | Jiageng Innovation Laboratory (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-122011922-A | Bottom anti-reflection coating composition and preparation and application thereof | 嘉庚创新实验室 | 2026-05-12 | — | — | CN | claimed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| CN-115368494-B | Monomer copolymer containing hexafluoroisopropanol, preparation method thereof, chemical amplification type photoresist and application thereof | 瑞红(苏州)电子化学品股份有限公司 | 2024-03-29 | — | — | CN | claimed |
| CN-117608167-A | Photoresist composition and method for producing photoresist pattern | 南开大学 | 2024-02-27 | — | — | CN | claimed |
| CN-110832397-B | Composition for forming resist underlayer film, and method for forming resist pattern | 日产化学株式会社 | 2023-12-15 | — | — | CN | claimed |
| WO-2023082371-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | 上海新阳半导体材料股份有限公司 | 2023-05-19 | — | — | WO | claimed |
| CN-115873176-A | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-03-31 | — | — | CN | claimed |
| CN-115873175-A | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-03-31 | — | — | CN | claimed |
| CN-115685678-A | Star-shaped molecular glass film forming resin and photoresist and preparation method thereof | 南通林格橡塑制品有限公司 | 2023-02-03 | — | — | CN | claimed |
| US-20040253547-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-12-16 | — | — | US | claimed |
| US-6569596-B1 | Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-05-27 | — | — | US | claimed |
| US-6235446-B1 | MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER | JSR CORPORATION (JP) | 2001-05-22 | — | — | US | claimed |
| US-6114422-A | Resist composition containing dialkyl malonate in base polymer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-09-05 | — | — | US | claimed |
| EP-0745633-B1 | Si containing high molecular compound and photosensitive resin composition | NEC CORP (JP) | 2000-08-02 | — | — | EP | claimed |
| US-5994022-A | BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID | JSR CORPORATION (JP) | 1999-11-30 | — | — | US | claimed |
| US-5916728-A | RESIN WHICH IS CONVERTED TO ALKALI-SOLUBLE FROM ALKALI-INSOLUBLE OR ALKALI-SLIGHTLY SOLUBLE BY THE ACTION OF AN ACID, ACID GENERATOR AND TERTIARY AMINE COMPOUND HAVING AN ALIPHATIC HYDROXYL GROUP. | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1999-06-29 | — | — | US | claimed |
| US-5723257-A | POLYVINYLSILSESQUIOXANES OR OTHER POLYSILOXANES | NEC CORPORATION (JP) | 1998-03-03 | — | — | US | claimed |
| US-5621019-A | PHOTORESIST CONTAINING PHOTO ACID GENERATOR AND ULTRAVIOLET RADIATION TRANSPARENT ACRYLIC POLYMER HAVING BRIDGED CYCLOHYDROCARBON GROUP RESIDUE; RESOLUTION, DRY ETCH RESISTANCE | NEC CORPORATION (JP) | 1997-04-15 | — | — | US | claimed |
| EP-0745633-A2 | Si containing high molecular compound and photosensitive resin composition | NEC CORPORATION (JP) | 1996-12-04 | — | — | EP | claimed |