Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 14/20 | 0.38 |
| ▸ | CA1 | P00915 | 13/20 | 0.38 |
| ▸ | MMP1 | P03956 | 3/20 | 0.33 |
| ▸ | MMP2 | P08253 | 3/20 | 0.33 |
| ▸ | MMP9 | P14780 | 3/20 | 0.33 |
| ▸ | MMP8 | P22894 | 3/20 | 0.33 |
| ▸ | MMP13 | P45452 | 3/20 | 0.33 |
| ▸ | F2 | P00734 | 3/20 | 0.31 |
| ▸ | PRSS1 | P07477 | 3/20 | 0.31 |
| ▸ | PRSS2 | P07478 | 3/20 | 0.31 |
| ▸ | PRSS3 | P35030 | 3/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2383424 | 0.79 | MGLL (0.30) | CA2 | |
| SCHEMBL4835348 | 0.79 | CA2 (0.38) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL215806 | 0.79 | PARL (0.40) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL4837339 | 0.77 | CA2 (0.41) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL503740 | 0.77 | CA2 (0.39) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL29366293 | 0.77 | KMT2A (0.49) | CA2CA1F2 | |
| SCHEMBL1470558 | 0.77 | KMT2A (0.49) | CA2CA1F2 | |
| SCHEMBL27216403 | 0.76 | CA2 (0.36) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL2904034 | 0.76 | KMT2A (0.48) | CA2CA1F2 | |
| SCHEMBL4835123 | 0.76 | CA2 (0.34) | CA2CA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8241830-B2 | Positive resist composition and a pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-08-14 | — | — | US | disclosed |
| US-20120076997-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-8124310-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20120003590-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-7887988-B2 | Acid generator; irradiating with actinic radiation | FUJIFILM CORPORATION (JP) | 2011-02-15 | — | — | US | disclosed |
| US-7799506-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-09-21 | — | — | US | disclosed |
| US-7691560-B2 | Resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-04-06 | — | — | US | disclosed |
| US-7625690-B2 | Acid generator; exposure to actinic radiation | FUJIFILM CORPORATION (JP) | 2009-12-01 | — | — | US | disclosed |
| EP-1835341-B1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORP (JP) | 2009-06-24 | — | — | EP | disclosed |
| US-20090087776-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20080193878-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-08-14 | — | — | US | disclosed |
| US-7410747-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2008-08-12 | — | — | US | disclosed |
| US-20080096134-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-24 | — | — | US | disclosed |
| US-20080081289-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080076062-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-03-27 | — | — | US | disclosed |
| US-7344821-B2 | Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2008-03-18 | — | — | US | disclosed |
| US-20080050675-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-02-28 | — | — | US | disclosed |
| US-7332258-B2 | Positive resist composition and process for forming pattern using the same | FUJIFILM CORPORATION (JP) | 2008-02-19 | — | — | US | disclosed |
| EP-1640409-B1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORP (JP) | 2008-02-13 | — | — | EP | disclosed |
| US-7326513-B2 | Positive working resist composition | FUJIFILM CORPORATION (JP) | 2008-02-05 | — | — | US | disclosed |